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Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements

As-grown Tl2Ga2S3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 x 10(16) ions/cm(2). The effect of N implantation with annealing at 300 degrees C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as 3.9 x 10(-20) cm(2). Also the concentration of the traps was estimated to be 8.0 x 10(11) cm(-3).