Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements

Date

2013-04-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

142
views

0
downloads

As-grown Tl2Ga2S3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 x 10(16) ions/cm(2). The effect of N implantation with annealing at 300 degrees C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as 3.9 x 10(-20) cm(2). Also the concentration of the traps was estimated to be 8.0 x 10(11) cm(-3).

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/40477

Journal

ACTA PHYSICA POLONICA A

DOI

https://doi.org/10.12693/aphyspola.123.766

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors Hasanlı, Nızamı (Korean Physical Society, 2007-04-01) We have carried out thermally stimulated current measurements on as-grown Tl(4)ln(3)GaS(8), Tl4InGa3Se8, and Tl2InGaS4 crystals in the low-temperature ranges of 10 - 90, 10 - 160, and 10 - 60 K, respectively. Using the different heating rates method, we revealed experimental evidence for trapping centers with activation energies of 12 meV (Tl4In3GaS8), 17 meV (Tl(4)lnGa(3)Se(8)), and 10 meV (Tl(2)lnGaS(4)). The capture cross sections of the traps were found to be 3.0 x 10(-25), 2.0 x 10(-26), and 1.3 x 10(-...
Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2011-03-01) Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and...
Optical properties of TlGa(SxSe1-x) 2 layered mixed crystals (0=x=1): Absorption edge and photoluminescence study at T=10 K Hasanlı, Nızamı (Springer Science and Business Media LLC, 2018-09-01) Transmittance measurements of layered mixed crystals were performed in the 1.80-2.80 eV photon energy range at . Band-gap energies of the studied crystals were estimated by means of the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The compositional dependence of direct band-gap energy at revealed that as sulphur (selenium) composition is increased (decreased) in the mixed crystals, the direct band-gap energy increases from 2.19 eV () to 2.67 eV (). Photolumines...
Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals Hasanlı, Nızamı (AIP Publishing, 2013-02-21) Photoluminescence spectra of Tl2GaInSe2S2 layered crystals have been registered in the temperature range of 17-62 K and in the wavelength region of 525-690 nm. A broad visible photoluminescence band centered at 590 nm (2.10 eV) was observed at T 17 K. Variation of emission band has been studied as a function of laser excitation intensity in the 0.1-55.7 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with excitation intensity (blue shift). The radiative transitions...
Modelling of non-uniform DC driven glow discharge in argon gas Rafatov, İsmail; BILIKMEN, S. (Elsevier BV, 2007-07-16) Physical properties of non-uniform DC-driven glow discharge in argon at pressure 1 torr are analyzed numerically. Spatially two-dimensional axial-symmetric model is based on the diffusion-drift theory of gas discharge. Results presented compare favorably with the classic theory of glow discharges and exhibit good agreement with the experimental result. Comparison with the result of spatially one-dimensional model is performed. (c) 2007 Elsevier B.V. All fights reserved.

Citation Formats

T. YILDIRIM, N. Hasanlı, and R. Turan, “Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements,” ACTA PHYSICA POLONICA A, pp. 766–769, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40477.