Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors

Date

2007-04-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

197
views

0
downloads

We have carried out thermally stimulated current measurements on as-grown Tl(4)ln(3)GaS(8), Tl4InGa3Se8, and Tl2InGaS4 crystals in the low-temperature ranges of 10 - 90, 10 - 160, and 10 - 60 K, respectively. Using the different heating rates method, we revealed experimental evidence for trapping centers with activation energies of 12 meV (Tl4In3GaS8), 17 meV (Tl(4)lnGa(3)Se(8)), and 10 meV (Tl(2)lnGaS(4)). The capture cross sections of the traps were found to be 3.0 x 10(-25), 2.0 x 10(-26), and 1.3 x 10(-24) cm(2), respectively. The values of the activation energies were compared with those obtained in photoluminescence experiments. From an optical absorption study, the energies of the indirect band gaps were determined for the crystals studied.

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/36303

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

DOI

https://doi.org/10.3938/jkps.50.1104

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements IŞIK, MEHMET; Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (Korean Physical Society, 2008-02-01) We have carried out thermally stimulated current (TSC) measurements with the current flowing along the layer on as-grown TlInS2 layered single crystals in the low temperature range 10 - 110 K with different heating rates of 0.1 - 1.5 K/s. Experimental evidence was found for the presence of two shallow electron trapping centers with activation energies of 12 and 14 meV. Their capture cross sections have been determined as 2.2 x 10(-23) and 7.1 x 10(-25) cm(2), respectively. It was concluded that retrapping i...
Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01) Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2011-03-01) Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and...
Low temperature thermoluminescence of Gd2O3 nanoparticles using various heating rate and T-max - T-exc. methods Delice, Serdar; IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2019-03-01) Thermoluminescence (FL) measurements for Gd2O3 nanoparticles were carried out for various heating rates between 0.3 and 0.8 K/s at low temperatures (10-280 K). TL spectrum exhibited two observable and one faint peaks in the temperature region of 10-100 K, and four peaks in the temperature region of 160-280 K. Heating rate analysis was achieved to understand the behaviors of trap levels. It was seen that the peak maximum temperatures and TL intensities of all peaks increase with increasing heating rate. This...
Optical properties of TlGa(SxSe1-x) 2 layered mixed crystals (0=x=1): Absorption edge and photoluminescence study at T=10 K Hasanlı, Nızamı (Springer Science and Business Media LLC, 2018-09-01) Transmittance measurements of layered mixed crystals were performed in the 1.80-2.80 eV photon energy range at . Band-gap energies of the studied crystals were estimated by means of the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The compositional dependence of direct band-gap energy at revealed that as sulphur (selenium) composition is increased (decreased) in the mixed crystals, the direct band-gap energy increases from 2.19 eV () to 2.67 eV (). Photolumines...

Citation Formats

N. Hasanlı, “Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors,” JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 1104–1108, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36303.