Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation

Date

2000-09-01

Author

Aktas, S
Okan, SE
Erdogan, I
Akbas, H
Tomak, Mehmet

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The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in agreement with those obtained in the experiments on the effective mass and the donor binding energy, both of which are strongly dependent on the well width. (C) 2000 Academic Press.

Subject Keywords

Electrical and Electronic Engineering, General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40711

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1006/spmi.2000.0899

Collections

Department of Physics, Article

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Citation Formats

S. Aktas, S. Okan, I. Erdogan, H. Akbas, and M. Tomak, “Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation,” SUPERLATTICES AND MICROSTRUCTURES, pp. 165–169, 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40711.