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Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation
Date
2000-09-01
Author
Aktas, S
Okan, SE
Erdogan, I
Akbas, H
Tomak, Mehmet
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in agreement with those obtained in the experiments on the effective mass and the donor binding energy, both of which are strongly dependent on the well width. (C) 2000 Academic Press.
Subject Keywords
Electrical and Electronic Engineering
,
General Materials Science
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/40711
Journal
SUPERLATTICES AND MICROSTRUCTURES
DOI
https://doi.org/10.1006/spmi.2000.0899
Collections
Department of Physics, Article
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Aktas, S. Okan, I. Erdogan, H. Akbas, and M. Tomak, “Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation,”
SUPERLATTICES AND MICROSTRUCTURES
, vol. 28, no. 3, pp. 165–169, 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40711.