Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells

Date

1998-01-01

Author

Akbas, H
Aktas, S
Okan, SE
Ulas, M
Tomak, Mehmet

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The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, accepters and excitons in finite-barrier GaAs/Ga1-xAlx As quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function epsilon(r) On the calculation of binding energies are specifically investigated. The use of epsilon(r) in comparison with the use of a constant epsilon(0) increases the binding energy of accepters as the increase on shallow donors and excitons is quite small. (C) 1998 Academic Press Limited.

Subject Keywords

Electrical and Electronic Engineering, General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42448

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1006/spmi.1996.9993

Collections

Department of Physics, Article

Citation Formats

H. Akbas, S. Aktas, S. Okan, M. Ulas, and M. Tomak, “Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells,” SUPERLATTICES AND MICROSTRUCTURES, vol. 23, no. 1, pp. 113–119, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42448.