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Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells

1998-01-01
Akbas, H
Aktas, S
Okan, SE
Ulas, M
Tomak, Mehmet
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, accepters and excitons in finite-barrier GaAs/Ga1-xAlx As quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function epsilon(r) On the calculation of binding energies are specifically investigated. The use of epsilon(r) in comparison with the use of a constant epsilon(0) increases the binding energy of accepters as the increase on shallow donors and excitons is quite small. (C) 1998 Academic Press Limited.