Anisotropy of electrical resistivity and hole mobility in InTe single crystals

Date

1996-01-01

Author

Parlak, Mehmet
Günal, İbrahim
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

185
views

0
downloads

The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain single crystals in parallel and perpendicular directions to c-axis have been investigated in the temperature range of 28-260 K. The high anisotropy between rho(parallel to) and rho(perpendicular to) which depends on temperature is attributed to high concentration of stacking faults due to weak interchain bonding. The mobility parallel to c-axis was found to vary with temperature as mu proportional to T-n where n = -0.6 due to hole scattering on polar optical phonons. The mobility perpendicular to c-axis above 140 K increases with temperature exponentially with an activation energy of 0.03 eV which is attributed to the hopping mechanism due to the barriers between the chains.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40925

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.2170310525

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01) The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal Hasanlı, Nızamı; Ozkan, H. (Wiley, 2006-11-01) Thermally stimulated current measurements are carried out on as-grown Tl4Ga3InSe8 layered single crystal in the temperature range 10-160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl4Ga3InSe8. They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experim...
Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals KARABULUT, ORHAN; Parlak, Mehmet; Yılmaz, Koray Kamil; Hasanlı, Nızamı (Wiley, 2005-03-01) The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10(-9) (Omega-cm)(-1), 48 cm(2)V(-1) s(-1) and similar to 10(9) cm(-3), respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single ...
Thermomagnetic effects of nondegenerate Kane semiconductors under the conditions of mutual electron-phonon drag in high electric and arbitrary magnetic fields Babaev, MM; Gassym, TM; Tas, M; Tomak, Mehmet (IOP Publishing, 2005-06-01) The thermopower and Nemst-Ettingshausen (NE) effect of nondegencrate Kane semiconductors are investigated by taking into account the electron and phonon heating and their arbitrary mutual drag. The electron spectrum is taken in the Kane two-band form. The electric and magnetic field dependences of the electronic and phonon parts of the thermoelectric and NE coefficients and voltages are obtained in analytical forms. It is shown that the mutual drag of electrons and phonons and degree of nonparabolicity of t...

Citation Formats

M. Parlak, İ. Günal, and N. Hasanlı, “Anisotropy of electrical resistivity and hole mobility in InTe single crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 673–678, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40925.