Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals

The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10(-9) (Omega-cm)(-1), 48 cm(2)V(-1) s(-1) and similar to 10(9) cm(-3), respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor-single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7x10(14) and 5.3x10(13) cm(-3), respectively. The mobility-temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 3 10 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo-response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent-light intensity dependence in these crystals obeys the power law, I-ph proportional to phi(gamma) with gamma between 1.7 and 2.0 for various applied fields and temperatures. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Citation Formats
O. KARABULUT, M. Parlak, K. K. Yılmaz, and N. Hasanlı, “Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, vol. 40, no. 3, pp. 253–258, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41138.