Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques

Hus, S. M.
Parlak, Mehmet
In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films deposited by thermal and e-beam evaporation techniques were carried out by measuring temperature dependent conductivity, mobility, photoconductivity under different illumination intensity, photoresponse, transmission and x-ray diffraction. As a result of these measurements, it was observed that the films deposited by the thermal evaporation technique have room temperature conductivity values approximately three orders of magnitude greater than the ones deposited by e-beam evaporation. Structural analysis showed that the films deposited by both methods with the same growth parameters have a mixed structure with the contribution of cubic and hexagonal structures. Two direct band gap values were obtained at 1.71 and 1.88 eV. Also, sublinear and supralinear photoconductivity behaviours related to sensitizing and imperfection levels lying at 0.12 and 0.28 eV below the conduction band were determined. The existence of these levels was clarified together with the valence band splitting by using photoresponse measurements.


Electrical and photoelectrical properties of Ag-In-Se thin films evaporated by e-beam technique
ÇOLAKOĞLU, Tahir; Parlak, Mehmet (IOP Publishing, 2009-02-07)
In this study, the electrical and photoelectrical properties of the Ag-In-Se thin films deposited by the e-beam technique have been investigated by carrying out temperature dependent conductivity, photoconductivity under different illumination intensities and photoresponse measurements between 380 and 1050 nm, as a function of annealing temperature. The measured conductivity values of the films at room temperature depending on the annealing temperatures vary in the range 1.9 x 10(-6)-5.2 Omega(-1) cm(-1). A...
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Goktas, H; Udrea, M; Oke, G; Alacakir, A; Demir, A; Loureiro, J (IOP Publishing, 2005-08-21)
The construction of a double discharge pulsed electron beam generator and the study of the characteristics of the beam are presented in this paper. The electron beam generator consists of a fast filamentary discharge in superposition with an ordinary glow discharge in low-pressure gases. The filling gas is argon or helium at approximately 0.1 Torr pressure. The duration of the electron beam is shorter than 50 ns and the peak current intensity is of the order of amperes. The electron density is evaluated by ...
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30)
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Photo-stimulated luminescence of calcium co-doped BaFBr : Eu2+ x-ray storage phosphors
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The influence of calcium co-doping on the optical properties of the x-ray storage phosphor BaFBr: Eu2+, is determined by photo- stimulated luminescence techniques. It is found that the incorporation of calcium into the lattice results in a broadening of the photo- stimulation peak due to a calcium induced FA(Br, Ca2+)-centre with stimulation maxima at 540 and 680 nm. The optical cross-sections for the photo- stimulated process are determined by utilizing stimulation light with linearly increasing intensity....
Spatial stabilization of Townsend and glow discharges with a semiconducting cathode
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The physical processes determining the functions of an ionization system and especially the discharge stabilization by the distributed resistance of a semiconducting cathode in such a system are studied. The current-voltage (I-U) characteristics of the system with a semiconducting GaAs cathode are obtained experimentally as functions of the gap pressure P (16-760 Torr) and inter-electrode distance d (10 mu m to 5 mm), which are varied for the first time over very wide ranges. The experiments showed that the...
Citation Formats
S. M. Hus and M. Parlak, “Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41077.