Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques

Hus, S. M.
Parlak, Mehmet
In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films deposited by thermal and e-beam evaporation techniques were carried out by measuring temperature dependent conductivity, mobility, photoconductivity under different illumination intensity, photoresponse, transmission and x-ray diffraction. As a result of these measurements, it was observed that the films deposited by the thermal evaporation technique have room temperature conductivity values approximately three orders of magnitude greater than the ones deposited by e-beam evaporation. Structural analysis showed that the films deposited by both methods with the same growth parameters have a mixed structure with the contribution of cubic and hexagonal structures. Two direct band gap values were obtained at 1.71 and 1.88 eV. Also, sublinear and supralinear photoconductivity behaviours related to sensitizing and imperfection levels lying at 0.12 and 0.28 eV below the conduction band were determined. The existence of these levels was clarified together with the valence band splitting by using photoresponse measurements.


Electrical and photoelectrical properties of Ag-In-Se thin films evaporated by e-beam technique
ÇOLAKOĞLU, Tahir; Parlak, Mehmet (IOP Publishing, 2009-02-07)
In this study, the electrical and photoelectrical properties of the Ag-In-Se thin films deposited by the e-beam technique have been investigated by carrying out temperature dependent conductivity, photoconductivity under different illumination intensities and photoresponse measurements between 380 and 1050 nm, as a function of annealing temperature. The measured conductivity values of the films at room temperature depending on the annealing temperatures vary in the range 1.9 x 10(-6)-5.2 Omega(-1) cm(-1). A...
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The construction of a double discharge pulsed electron beam generator and the study of the characteristics of the beam are presented in this paper. The electron beam generator consists of a fast filamentary discharge in superposition with an ordinary glow discharge in low-pressure gases. The filling gas is argon or helium at approximately 0.1 Torr pressure. The duration of the electron beam is shorter than 50 ns and the peak current intensity is of the order of amperes. The electron density is evaluated by ...
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The physical processes determining the functions of an ionization system and especially the discharge stabilization by the distributed resistance of a semiconducting cathode in such a system are studied. The current-voltage (I-U) characteristics of the system with a semiconducting GaAs cathode are obtained experimentally as functions of the gap pressure P (16-760 Torr) and inter-electrode distance d (10 mu m to 5 mm), which are varied for the first time over very wide ranges. The experiments showed that the...
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To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
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A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and i...
Citation Formats
S. M. Hus and M. Parlak, “Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41077.