Perturbation analysis of sheath evolution, with application to plasma source ion implantation

Date

2001-02-07

Author

Bektursunova, RM
Demokan, O

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A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and ion flux are obtained and compared successfully with experimental and simulation results.

Subject Keywords

Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/64982

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

DOI

https://doi.org/10.1088/0022-3727/34/3/313

Collections

Department of Physics, Article

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Citation Formats

R. Bektursunova and O. Demokan, “Perturbation analysis of sheath evolution, with application to plasma source ion implantation,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 326–329, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/64982.