Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals

Date

2015-07-01

Author

IŞIK, MEHMET
YILDIRIM, TACETTİN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

63
views

0
downloads

Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature.

Subject Keywords

Defects, Luminescence, Crystal growth, Semiconductors

URI

https://hdl.handle.net/11511/41146

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2015.03.007

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Characterization of defect states in Ag0.5Cu0.5In5S8 solid solution by photoluminescence and thermally stimulated current Hasanlı, Nızamı (2015-08-01) Photoluminescence (PL) and thermally stimulated current (TSC) in Ag(0.5)Cu(0.5)in(5)S(8) solid solution grown by Bridgman method have been studied in the photon energy region of 1.46-1.60 eV and in the temperature range of 10-42 K (PL) and in the temperature range of 10-100 K with heating rate of 1.01 K/s (TSC). A PL band centered at 1.53 eV was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 1.8-183.0 mW cm(-2) range. Radiative transitio...
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals Hasanlı, Nızamı (2013-01-15) Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-07-01) As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determi...
Analysis of optical constants and temperature-dependent absorption edge of GaS0.75Se0.25 layered crystals IŞIK, MEHMET; Hasanlı, Nızamı (2017-06-01) GaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measurements in the wavelength range of 450-1000 nm. Derivative spectrophotometry analyses on temperature dependent transmittance spectra showed that band gap energies of the crystal increase from 239 eV (T=300 K) to 2.53 eV (T=10 K). Band gap at zero temperature, average phonon energy, electron phonon coupling parameter and rates of change of band gap energy with temperature were found from the temperature depend...
Study of vibrational modes in CuxAg1-xIn5S8 mixed crystals by infrared reflection measurements Hasanlı, Nızamı (2018-04-01) Infrared reflection spectra of CuxAg1-xIn5S8 mixed crystals, grown by Bridgman method, were studied in the wide frequency range of 50-2000 cm(-1). All four infrared-active modes were detected, which are in full agreement with the prediction of group-theoretical analysis. Real and imaginary parts of the dielectric function, refractive index and the energy losses function were evaluated from reflectivity measurements. The frequencies of TO and LO modes and oscillator strengths were also determined. The bands ...

Citation Formats

M. IŞIK, T. YILDIRIM, and N. Hasanlı, “Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 56–59, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41146.