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Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals
Date
2015-07-01
Author
IŞIK, MEHMET
YILDIRIM, TACETTİN
Hasanlı, Nızamı
Metadata
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Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature.
Subject Keywords
Defects
,
Luminescence
,
Crystal growth
,
Semiconductors
URI
https://hdl.handle.net/11511/41146
Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
DOI
https://doi.org/10.1016/j.jpcs.2015.03.007
Collections
Department of Physics, Article