Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals

Date

2015-07-01

Author

IŞIK, MEHMET
YILDIRIM, TACETTİN
Hasanlı, Nızamı

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Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature.

Subject Keywords

Defects, Luminescence, Crystal growth, Semiconductors

URI

https://hdl.handle.net/11511/41146

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2015.03.007

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK, T. YILDIRIM, and N. Hasanlı, “Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 56–59, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41146.