Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements

Date

2009-07-01

Author

Güler, Işıkhan
Hasanlı, Nızamı

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As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determined as 4.2 s(-1), 2.4 x 10(9) cm(-3) and 1.7 x 10(-24) cm(2), respectively. It was concluded that slow retrapping (monomolecular condition) occurs for the traps in Tl2In2S3Se crystals. By the analysis of thermally stimulated current data at different light excitation temperatures, the value of 39 meV/decade was obtained for traps distribution.

Subject Keywords

Electrical properties, Defects, Chalcogenides, Semiconductors

URI

https://hdl.handle.net/11511/30929

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2009.03.035

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

I. Güler and N. Hasanlı, “Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements,” PHYSICA B-CONDENSED MATTER, pp. 2034–2038, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30929.