Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements
Date
2009-07-01
Author
Güler, Işıkhan
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
197
views
0
downloads
Cite This
As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determined as 4.2 s(-1), 2.4 x 10(9) cm(-3) and 1.7 x 10(-24) cm(2), respectively. It was concluded that slow retrapping (monomolecular condition) occurs for the traps in Tl2In2S3Se crystals. By the analysis of thermally stimulated current data at different light excitation temperatures, the value of 39 meV/decade was obtained for traps distribution.
Subject Keywords
Electrical properties
,
Defects
,
Chalcogenides
,
Semiconductors
URI
https://hdl.handle.net/11511/30929
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2009.03.035
Collections
Graduate School of Natural and Applied Sciences, Article
Suggestions
OpenMETU
Core
Trapping center parameters in In6S7 crystals
IŞIK, MEHMET; Hasanlı, Nızamı (2011-07-01)
Thermally stimulated current measurements were carried out on In6S7 single crystals in the temperature range of 10-225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c-axis of crystals. The analysis of the glow curve according to various methods, such as curve fitting, initial rise and peak shape methods, gives results in good agreement with each other and revealed two trapping centers in In6S7 with activation energi...
Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements
Güler, Işıkhan; Hasanlı, Nızamı (2009-10-19)
Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was...
Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current
YILDIRIM, TACETTİN; Hasanlı, Nızamı; TÜZEMEN, Sebahattin (2018-06-01)
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using thermally stimulated currents (TSC) technique. During the experiments we utilized a constant heating rate of 0.2 K/s. Experimental evidence is found for two electron trapping centers in the crystal with activation energies of 44 and 50 meV. The analysis of the experimental TSC curve suggests slow retrapping. The capture cross sections of the traps were determined as 8.8 x 10(-25) and 1.0 x 10(-25) cm(2) with con...
Analysis of glow curve of GaS0.5Se0.5 single crystals
IŞIK, MEHMET; Delice, Serdar; Hasanlı, Nızamı (2015-12-01)
Characterization of shallow trapping centers in GaS0.5Se0.5 crystals grown by a Bridgman method was carried out in the present work using thermoluminescence (TL) measurements performed in the low temperature range of 10-300 K. The activation energies of the trapping centers were obtained under the light of results of various analysis methods. The presence of three trapping centers located at 6, 30 and 72 meV was revealed. The analysis of the experimental glow curve gave reasonable results under the model th...
Determination of optical parameters of Ga0.75In0.25Se layered crystals
IŞIK, MEHMET; Hasanlı, Nızamı (2012-05-01)
The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zer...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
I. Güler and N. Hasanlı, “Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements,”
PHYSICA B-CONDENSED MATTER
, pp. 2034–2038, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30929.