Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals

Date

2013-01-15

Author

Hasanlı, Nızamı

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Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from donor level located at 647 meV below the bottom of conduction band to shallow acceptor level located at 22 meV above the top of the valence band were suggested to be responsible for the observed PL band.

Subject Keywords

Semiconductors, Crystal growth, Defects, Luminescence

URI

https://hdl.handle.net/11511/36301

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2012.08.134

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 33–36, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36301.