Temperature-dependent band gap characteristics of Bi12SiO20 single crystals

Date

2019-12-28

Author

Isik, M.
Delice, S.
Hasanlı, Nızamı
Darvishov, N. H.
Bagiev, V. E.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

60
views

0
downloads

Bi12SiO20 single crystals have attracted interest due to their remarkable photorefractive characteristics. Since bandgap and refractive index are related theoretically to each other, it takes much attention to investigate temperature dependency of bandgap energy to understand the behavior of photorefractive crystals. The present study aims at investigating structural and optical characteristics of photorefractive Bi12SiO20 single crystals grown by the Czochralski method. The structural characterization methods indicated that atomic composition ratios of constituent elements were well-matched with the chemical compound Bi12SiO20, and grown crystals have a cubic crystalline structure. Optical properties of crystals were investigated by room temperature Raman spectroscopy and temperature-dependent transmission measurements between 10 and 300 K. The analyses of transmittance spectra by absorption coefficient and derivative spectrophotometry techniques resulted in energy bandgaps decreasing from 2.61 to 2.48 eV and 2.64 to 2.53 eV as temperature was increased from 10 to 300 K. The Varshni model was applied to analyze temperature-bandgap energy dependency.

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/41170

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.5129019

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2011-03-01) Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and...
Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-03-01) The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect in addition to the temperature dependent current-voltage characteristics and photosensitivity of the Ag/Tl4Se3S Schottky barrier diode were studied. The X-ray diffraction patterns have revealed that the crystal exhibited a single phase of tetragonal structure belonging to the D-4h(18) - 14mcm space group. A Debye temperat...
Singularities of spectra of infrared reflection of tertiary compounds of the type T1BX2 Hasanlı, Nızamı; Khomutova, M.D.; Sardarly, R.M.; Tagorov, V.I. (Springer Science and Business Media LLC, 1977-07-01) The frequencies of lattice vibrations are calculated for compounds of the type T1BX2 on the basis of the linear-chain model. The calculated frequencies are compared with experimental values for TlGaS2 and TlGaSe2. The good agreement between the calculated and experimental frequencies serves as proof of the applicability of the linear-chain model to compounds of the T1BX2 type. The proposed method of calculation of frequencies makes it possible to predict the theoretical frequencies of lattice vibrations of ...
Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe2 Crystals QASRAWI, ATEF FAYEZ HASAN; Yaseen, T. R.; Eghbariy, B.; Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2012-07-01) Anisotropic space charge limited current density analysis and photovoltaic effect in TlGaTe2 single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficien...
Optical absorption and reflection studies of Tl4InGa3S8 layered single crystals Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (Institute of Physics, Polish Academy of Sciences, 2007-07-01) The optical properties of Tl4InGa3S8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature as g...

Citation Formats

M. Isik, S. Delice, N. Hasanlı, N. H. Darvishov, and V. E. Bagiev, “Temperature-dependent band gap characteristics of Bi12SiO20 single crystals,” JOURNAL OF APPLIED PHYSICS, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41170.