Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates

Date

2018-04-01

Author

Ahiboz, Doguscan
Nasser, Hisham
Aygun, Ezgi
Bek, Alpan
Turan, Raşit

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Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2-x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2-x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2-x was revealed.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37878

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/1361-6641/aab535

Collections

Department of Physics, Article

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Citation Formats

D. Ahiboz, H. Nasser, E. Aygun, A. Bek, and R. Turan, “Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37878.