Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates

Date

2018-04-01

Author

Ahiboz, Doguscan
Nasser, Hisham
Aygun, Ezgi
Bek, Alpan
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

241
views

0
downloads

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2-x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2-x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2-x was revealed.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37878

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/1361-6641/aab535

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices Bayhan, H; Ercelebi, C (IOP Publishing, 1997-05-01) The effects of post-deposition processes such as CdCl2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl2 dip followed by air annealing at 300 degrees C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current tr...
Stability analysis of graphene nanoribbons by molecular dynamics simulations Dugan, N.; Erkoç, Şakir (Wiley, 2008-04-01) In this work, stability of graphene nanoribbons are investigated using molecular dynamics. Simulations include heating armchair and zigzag-edged nanoribbons of widths varying between one and nine hexagonal rings until the bonds between carbon atoms start to break. Breaking temperatures and binding energies per atom for different widths are presented for both armchair and zigzag-edged cases. A nontrivial relation between stability and width is observed and discussed.
Quantum Transport Mode in Graphene Nanoribbon Based Transistor Hedayat, Sayed Norollah; Ahmadi, Mohammad Taghi; Sedghi, Hassan; Goudarzi, Hadi; Moradi, Shahram (American Scientific Publishers, 2017-09-01) Graphene has incredible carrier transport property with high application opportunity at single molecule level, which composes it as promising materials on nano electronic application. In order to develop the new device such as graphene nanoribbon transistor, Carbon Nanotube Field Effect Transistor (CNTFET) and nanowire based devices, it is essential to investigate the quantum limit in low dimensional systems. In this paper transmission coefficient of the schottky structure in the graphene based transistor i...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01) This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Thermally stimulated currents in layered semiconductor Tl4In3GaS8 Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01) We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...

Citation Formats

D. Ahiboz, H. Nasser, E. Aygun, A. Bek, and R. Turan, “Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37878.