High power microsecond fiber laser at 1.5 mu m

Download

10.1364:OE.377751.pdf

Date

2020-06-01

Author

Pavlova, Svitlana
Yagci, M. Emre
Eken, S. Koray
Tunckol, Ersan
Pavlov, Ihor

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

247
views

154
downloads

In this work, we demonstrate a single frequency, high power fiber-laser system, operating at 1550 nm, generating controllable rectangular-shape mu s pulses. In order to control the amplified spontaneous emission content, and overcome the undesirable pulse steepening during the amplification, a new method with two seed sources operating at 1550 nm and 1560 nm are used in this system. The output power is about 35 W in CW mode, and the peak power is around 32 W in the pulsed mode. The repetition rate of the system is tunable between 50 Hz to 10 kHz, and the pulse duration is adjustable from 10 mu s to 100 mu s, with all on the fly electronically configurable design. The system demonstrates excellent long and short time stability, as well as spectral and spatial beam quality. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Subject Keywords

Atomic and Molecular Physics, and Optics, OUTPUT POWER, AMPLIFIER, MODE, NM

URI

https://hdl.handle.net/11511/41682

Journal

OPTICS EXPRESS

DOI

https://doi.org/10.1364/oe.377751

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

High power microsecond fiber laser at 1.5 μm Pavlova, Svitlana; Yagci, M. Emre; Eken, S. Koray; Tunckol, Ersan; Pavlov, Ihor (The Optical Society, 2020-06-08) © 2020 Optical Society of America.In this work, we demonstrate a single frequency, high power fiber-laser system, operating at 1550 nm, generating controllable rectangular-shape μs pulses. In order to control the amplified spontaneous emission content, and overcome the undesirable pulse steepening during the amplification, a new method with two seed sources operating at 1550 nm and 1560 nm are used in this system. The output power is about 35 W in CW mode, and the peak power is around 32 W in the pulsed mod...
Near-infrared Hong-Ou-Mandel interference on a silicon quantum photonic chip Xu, Xinan; Xie, Zhenda; Zheng, Jiangjun; Liang, Junlin; Zhong, Tian; Yu, Mingbin; Kocaman, Serdar; Lo, Guo-Qiang; Kwong, Dim-Lee; Englund, Dirk R.; Wong, Franco N.C.; Wong, Chee Wei (The Optical Society, 2013-02-25) Near-infrared Hong-Ou-Mandel quantum interference is observed in silicon nanophotonic directional couplers with raw visibilities on-chip at 90.5%. Spectrally-bright 1557-nm two-photon states are generated in a periodically-poled KTiOPO4 waveguide chip, serving as the entangled photon source and pumped with a self-injection locked laser, for the photon statistical measurements. Efficient four-port coupling in the communications C-band and in the high-index-contrast silicon photonics platform is demonstrated,...
High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01) We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
High-accuracy optical power measurements by using electrical-substitution cryogenic radiometer Bazkir, O; Ugur, S; Samedov, F; Esendemir, A (SPIE-Intl Soc Optical Eng, 2005-01-01) An optical power scale is established at Ulusal Metroloji Enstitusu (UME) using the helium-cooled primary-level electrical-substitution cryogenic radiometer. The scale is established at discrete laser wavelengths of vertically polarized tuneable Ar+, fixed He-Ne, and Nd:YAG (with second harmonic) laser sources. To increase measurement accuracy, laser intensities are stabilized to better than 0.009% using an electro-optical modulator. The spatial profiles of polarized laser beams are cleaned with a spatial f...
High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 mu m Cut-Off for High-Speed Thermal Imaging Eker, Suleyman Umut; Arslan, Yetkin; Onuk, Ahmet Emre; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2010-02-01) InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 x 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In0.48Ga0.52As (instead of In0.53Ga0.47As) as the quantum well material shifts the cut-off wavelength from similar to 8.5 to 9.7 mu m. The FPA fabricated with the 40-well epilayer structure yield...

Citation Formats

S. Pavlova, M. E. Yagci, S. K. Eken, E. Tunckol, and I. Pavlov, “High power microsecond fiber laser at 1.5 mu m,” OPTICS EXPRESS, pp. 18368–18375, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41682.