Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements

Date

2012-06-15

Author

Isik, M.
Hasanlı, Nızamı

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The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.

Subject Keywords

Semiconductors, Energy band gap, Ellipsometry, Refractive index

URI

https://hdl.handle.net/11511/41835

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.03.004

Collections

Department of Physics, Article

Citation Formats

M. Isik and N. Hasanlı, “Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements,” PHYSICA B-CONDENSED MATTER, vol. 407, no. 12, pp. 2229–2233, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41835.