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Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements
Date
2012-06-15
Author
Isik, M.
Hasanlı, Nızamı
Metadata
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The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.
Subject Keywords
Semiconductors
,
Energy band gap
,
Ellipsometry
,
Refractive index
URI
https://hdl.handle.net/11511/41835
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2012.03.004
Collections
Department of Physics, Article
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M. Isik and N. Hasanlı, “Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements,”
PHYSICA B-CONDENSED MATTER
, pp. 2229–2233, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41835.