The effect of annealing conditions on the red photoluminescence of nanocrystalline Si/SiO 2 films

Date

2003-02-03

Author

Wu, Xiaochun
Bek, Alpan
Bittner, Alexander M.
Eggs, Ch.
Ossadnik, Ch.
VEPREK, S

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

201
views

0
downloads

Nanocrystalline Si (nc-Si) embedded in a SiO2 matrix, fabricated by plasma CVD and a subsequent post-treatment shows a broad red photoluminescence (PL). In this paper, the effects of annealing temperature, atmosphere and time on the red PL from 1.75 to 1.5 eV have been investigated in detail. It is found that the spectral shift and the PL intensity from 1.75 to 1.5 eV show a strong and unique dependence on annealing conditions. For a PL approximately 1.75 eV, upon 400 °C forming gas annealing, the spectral shift and the peak intensity versus accumulation annealing times show a novel temporal oscillation. This unique dependence and the novel temporal oscillation behavior, which have not been reported in porous silicon, exclude nc-Si itself as the source of the red PL. Instead they favor oxygen thermal donors (TDs)-like defect states as PL centers. This is in consensus with our earlier results of defect studies using electron spin resonance in this system. Furthermore, two PL centers in this red PL were distinguished according to their variance in annealing temperature- and time-dependence. The spectral change between 1.5 and 1.75 eV upon annealing conditions can be qualitatively explained by using the formation and annihilation kinetics of two oxygen TDs-like defect state.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/42022

Journal

Thin Solid Films

DOI

https://doi.org/10.1016/s0040-6090(02)01113-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films Parlak, Mehmet (Elsevier BV, 1998-06-08) X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150-250 degrees C and 100-200 degrees C, respectively. An analysis of structural measurements indicates that there exist three phases of In-Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The comp...
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy Serincan, U; Kartopu, G; Guennes, A; Finstad, TG; Turan, Raşit; Ekinci, Y; Bayliss, SC (IOP Publishing, 2004-02-01) Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It is shown that Raman analysis based on the phonon confinement model yields a successful explanation of the peculiar characteristics resulting from the nanocrystals. A broadening and a shift in the Raman peak are expected to result from the reduced size of the crystals. Asymmetry in the peak is attributed to the variations in the size of the nanocrystals. These effects were observed experimentally for the Ge nan...
An ab initio study on the investigation of structural, electronic, mechanical and lattice dynamical properties of the M(2)AX type MAX phases Sc2AlB0.5C0.5, Sc2AlB0.5N0.5 and Sc2AlC0.5N0.5 compounds SÜRÜCÜ, GÖKHAN; SÜRÜCÜ, GÖKHAN (IOP Publishing, 2017-10-01) The hypothetical Sc2AlB0.5C0.5, Sc2AlB0.5N0.5 and Sc2AlC0.5N0.5 compounds are M(2)AX type MAX phases referred to as #211 and have hexagonal crystal structure which conforms to P6(3)/mmc space group. These compounds have been investigated by using generalized gradient approximation in the Density Functional Theory and plane-wave pseudopotential method. After the optimization process of the compounds, their structural, electronic, mechanical, and lattice dynamical properties have been examined in detail. The ...
Effect of molecular and electronic structure on the light-harvesting properties of dye sensitizers Mete, E.; Üner, Deniz; Cakmak, M.; Gulseren, O.; Ellialtoglu, S. (American Chemical Society (ACS), 2007-05-24) The systematic trends in structural and electronic properties of perylenediimide (PDI)-derived dye molecules have been investigated by DFT calculations based on the projector-augmented wave (PAW) method including gradient-corrected exchange-correlation effects. Time-dependent density functional theory (TDDFT) calculations have been performed to study the visible absorbance activity of these complexes. The effect of different ligands and halogen atoms attached to PDI were studied to characterize the light-ha...
Revealing Laser Crystallization Mechanism of Silicon Thin Films via Pulsed IR Lasers Çlnar, Kamil; Yeşil, Cihan; Bek, Alpan (American Chemical Society (ACS), 2020-01-01) Pulsed laser absorption-mediated explosive crystallization of silicon films has extensively been studied using microscopy techniques on single laser pulse-irradiated regions in the literature. In this work, we experimentally demonstrate and theoretically explain in detail the use of slow quenching regime for laser crystallization mediated by highly overlapping pulses. Increasing the use of Si in thin film transistors and photovoltaic applications drives researchers to find cost-effective and efficient ways ...

Citation Formats

X. Wu, A. Bek, A. M. Bittner, C. Eggs, C. Ossadnik, and S. VEPREK, “The effect of annealing conditions on the red photoluminescence of nanocrystalline Si/SiO 2 films,” Thin Solid Films, pp. 175–184, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42022.