The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films

X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150-250 degrees C and 100-200 degrees C, respectively. An analysis of structural measurements indicates that there exist three phases of In-Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The composition of InSe films changed significantly with substrate temperature and slightly with annealing temperature because of re-evaporation of selenium. The transmission measurements were carried out at room temperature over the spectral range 0.5 to 2.5 mu m. As a result of optical energy gap studies, the direct energy band gap was found to be in between 1.21 and 1.38 eV depending on substrate and annealing temperatures. (C) 1998 Elsevier Science S.A. All rights reserved.
Thin Solid Films


Structural and optical properties of thermally annealed thallium indium disulfide thin films
Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30)
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation
Sedani, Salar H.; Yasar, Ozlen F.; Karaman, Mehmet; Turan, Raşit (Elsevier BV, 2020-01-31)
In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing ...
Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids
BACAKSIZ, EMİN; YILMAZ, ŞERİFE; Parlak, Mehmet; Varilci, A.; Altunbas, M. (Elsevier BV, 2009-06-10)
ZnO thin films were deposited on quartz substrate at 550 degrees C by using spray pyrolysis method and subsequently annealed between 600-900 degrees C with a step of 100 degrees C. The characterizations of the structural and optical properties of the films have been carried out by means of X-ray diffraction, scanning electron microscopy (SEM) and optical transmittance measurements. XRD ans SEM images indicated that annealing temperature did not play a great role on the microstructure of ZnO films. ZnO thin ...
Optoelectrochemical properties of the copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole monomer with 3,4-ethylenedioxythiophene
AK, Metin; Tanyeli, Cihangir; Akhmedo, Dris M.; Toppare, Levent Kamil (Elsevier BV, 2008-04-30)
Copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole (MTNP) with 3,4-ethylene dioxythiophene (EDOT) was electro-chemically synthesized and characterized via cyclic voltammetry, Fourier Transform Infrared spectroscopy, Scanning Electron Microscopy, conductivity measurements. Spectroelectrochemical investigations showed that resulting copolymer film has distinct electrochromic properties. It has five different colors (dark purple, red, light grey, green, blue). At the neutral state m due to...
Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2008-07-01)
In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter...
Citation Formats
M. Parlak, “The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films,” Thin Solid Films, pp. 334–339, 1998, Accessed: 00, 2020. [Online]. Available: