Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals

Date

2012-07-15

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components.

Subject Keywords

Barrier height, Capacitance, TlGaSe2, Varactor

URI

https://hdl.handle.net/11511/42050

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.04.020

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals,” PHYSICA B-CONDENSED MATTER, pp. 2749–2752, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42050.