Temperature-dependent structural transition, electronic properties and impedance spectroscopy analysis of Tl2InGaS4 crystals grown by the Bridgman method

Qasrawi, A. F.
Alkarem, Qotaibah A.
Hasanlı, Nızamı
In this work, we report the temporary structural modifications associated with the in situ heating of the Tl2InGaS4 crystals in the temperature range of 300-420 K. The analysis of the X-ray diffraction patterns revealed the temperature-independent possible phase transformations between the monoclinic and triclinic phases. The temperature analysis of the lattice parameters, crystallite size, strain, dislocation density and stacking faults has shown a temporary enhancement in the crystallinity of this compound above 375 K. Significant increase in the grain size accompanied to decrease in the strain, defect density and stacking faults was observed above this temperature. The scanning electron microscopy imaging has shown that the crystals are layer structured with high quality layers of thicknesses of similar to 12 nm. In addition the energy dispersive X-ray analysis has shown that the crystal comprise no detectable impurity. Moreover, the room temperature optical characterizations has shown that the Tl2InGaS4 exhibit an energy band gap of 2.5 eV. The temperature dependent electrical resistivity measurements indicated highly resistive crystal with activation energy values of 0.84 and 0.19 eV above and below 375 K, respectively. On the other hand, room temperature impedance spectroscopy analysis in the frequency domain of 10-1800 MHz has shown that the crystal exhibits negative resistance and negative capacitance effects below and above 1580 MHz. The crystals are observed also to behave as band stop filter with notch frequency of 1711 MHz.


Temperature effects on the structural and optical properties of the TlInSe2xS2(1-x) mixed crystals (x=0.3)
Omar, A.; Qasrawi, A. F.; Hasanlı, Nızamı (2017-11-15)
In this work, we have studied the temperature effects on the recrystallization process and on the energy band gap of the TlInSe(2)xS(2(1 - x)) mixed crystals at the critical composition (x = 0.3) where structural phase transition from tetragonal to monoclinic takes place. Remarkable effect which included permanent recrystallization process, enlargements in the monoclinic crystallite size, decreases in the compressing strain and in the dislocation density as well as in the stacking faults and in the energy b...
Temperature-tuned band gap energy and oscillator parameters of TlInSeS layered single crystals
Hasanlı, Nızamı; Güler, Işıkhan (2008-09-10)
The parameters of monoclinic unit cell of TlInSeS layered crystals were determined from X-ray powder diffraction study. The optical properties of TlInSeS have been investigated by means of transmission and reflection measurements in the wavelength range of 500-1100 nm. The optical indirect transitions with band gap energy of 2.05 eV and direct transitions with band gap energy of 2.21 eV were found by means of the analysis of the absorption data at room temperature. Transmission measurements carried out in t...
Luminescence sensitivity changes in natural quartz induced by high temperature annealing: a high frequency EPR and OSL study
Poolton, NRJ; SMITH, GM; RIEDI, PC; Bulur, Enver; Botter-Jensen, L; MURRAY, AS; ADRIAN, M (2000-04-21)
Quartz undergoes very significant luminescence sensitivity changes after high temperature annealing (0-1200 degrees C), with particular enhancement occurring between the phase transition temperatures 573 and 870 degrees C. In order to understand why this occurs, high frequency electron paramagnetic resonance (EPR), operating at 90 GHz, has been used to monitor the structure and population of defects in natural sedimentary quartz, following annealing and gamma-irradiation. The results are compared with the o...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01)
Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
Energy band gap and oscillator parameters of Ga4Se3S single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (Elsevier BV, 2007-06-01)
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 a...
Citation Formats
A. F. Qasrawi, Q. A. Alkarem, and N. Hasanlı, “Temperature-dependent structural transition, electronic properties and impedance spectroscopy analysis of Tl2InGaS4 crystals grown by the Bridgman method,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 76–82, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41399.