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Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals
Date
2005-03-01
Author
Yuksek, NS
Hasanlı, Nızamı
Metadata
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Raman spectra of TlGaSe2 crystal at different temperatures are discussed. The temperature dependence of frequency shifts and linewidths of the Raman peaks in the frequency region of 10-320 cm(-1) have been measured in the range from 50 to 320 K. The analysis of the experimental data showed that the temperature dependencies of phonon frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject Keywords
TlGaSe2
,
Layered crystals
,
Anharmonicity
,
Phonon-phonon coupling
URI
https://hdl.handle.net/11511/32777
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/crat.200410336
Collections
Department of Physics, Article
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N. Yuksek and N. Hasanlı, “Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals,”
CRYSTAL RESEARCH AND TECHNOLOGY
, pp. 264–270, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32777.