Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals

Date

2005-03-01

Author

Yuksek, NS
Hasanlı, Nızamı

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Raman spectra of TlGaSe2 crystal at different temperatures are discussed. The temperature dependence of frequency shifts and linewidths of the Raman peaks in the frequency region of 10-320 cm(-1) have been measured in the range from 50 to 320 K. The analysis of the experimental data showed that the temperature dependencies of phonon frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

TlGaSe2, Layered crystals, Anharmonicity, Phonon-phonon coupling

URI

https://hdl.handle.net/11511/32777

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200410336

Collections

Department of Physics, Article

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Citation Formats

N. Yuksek and N. Hasanlı, “Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 264–270, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32777.