Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films

2020-08-01
Delice, S.
Isik, M.
Gullu, H. H.
Terlemezoglu, M.
Surucu, O. Bayrakli
Hasanlı, Nızamı
Parlak, Mehmet
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.

Citation Formats
S. Delice et al., “Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 114, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42079.