Thermally stimulated currents in n-InS single crystals

Hasanlı, Nızamı
Yuksek, NS
Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.


Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry
Isik, M.; Delice, S.; Nasser, H.; Hasanlı, Nızamı; Darvishov, N. H.; Bagiev, V. E. (Elsevier BV, 2020-12-01)
Structural and optical characteristics of Bi12SiO20 single crystal grown by the Czochralski method were investigated by virtue of X-ray diffraction (XRD) and spectroscopic ellipsometry measurements. XRD analysis indicated that the studied crystal possesses cubic structure with lattice parameters of a = 1.0107 nm. Spectral dependencies of several optical parameters like complex dielectric constant, refractive index, extinction and absorption coefficients were determined using ellipsometry experiments perform...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Electrical conductivity of polypyrrole films at a temperature range of 70 K to 350 K
Kaynak, A (Elsevier BV, 1998-01-01)
The de conductivity of electrochemically synthesized polypyrrole films doped from light to intermediate levels with p-toluene sulfonic acid was measured in the temperature range of 77 to 300 K, using a modified four-probe rig. Plots of de conductivity vs. temperature were parameterized by fitting Mott's Variable Range Hopping conduction model. The localization length of localized electrons was assumed to be 3 Angstrom, which is approximately equal to the length of a pyrrole monomer. Mott parameters of polyp...
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals
YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15)
Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...
Transient and steady state photoelectronic analysis in TlInSe2 crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-08-01)
The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. Th...
Citation Formats
N. Hasanlı and N. Yuksek, “Thermally stimulated currents in n-InS single crystals,” MATERIALS RESEARCH BULLETIN, pp. 699–704, 2003, Accessed: 00, 2020. [Online]. Available: