Thermally stimulated currents in n-InS single crystals

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2003-03-24

Author

Hasanlı, Nızamı
Yuksek, NS

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Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/41494

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/s0025-5408(02)01051-6

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı and N. Yuksek, “Thermally stimulated currents in n-InS single crystals,” MATERIALS RESEARCH BULLETIN, pp. 699–704, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41494.