Structural and electrical characterization of Ag3Ga5Te9 and Ag3In5Se9 crystals

Date

1998-01-01

Author

Parlak, Mehmet
Günal, İbrahim
Hasanlı, Nızamı

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X-ray powder diffraction studies revealed that Ag3Ga5Te9 and Ag3In5Se9 crystallize in orthorhombic and tetragonal systems. respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65-480 K. Ag3Ga5Te9 exhibits p-type conduction with a room temperature conductivity of 4.3 x 10(-4) (Omega.cm)(-1) and mobility less than 1 cm(2)/V.s. Ag3In5Se9 was identified to be n-type with room temperature conductivity 7.2 x 10(-5) (Omega.cm)(-1) and mobility 20 cm(2)/V.s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42145

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/(sici)1521-4079(1998)33:6<923::aid-crat923>3.0.co;2-s

Collections

Department of Physics, Article

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Citation Formats

M. Parlak, İ. Günal, and N. Hasanlı, “Structural and electrical characterization of Ag3Ga5Te9 and Ag3In5Se9 crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 923–928, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42145.