Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals
Date
2001-01-01
Author
Qasrawi, AF
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
208
views
0
downloads
Cite This
The X-ray diffraction has revealed that CuIn5S8 is a single phase crystal of cubic spinet structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8 crystals are measured in the temperature range of 50-400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of similar to1.35 eV at 0 K, a carrier effective mass of 0.2 m(0), an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/47495
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/1521-4079(200112)36:12<1399::aid-crat1399>3.0.co;2-o
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Crystal data, electrical resistivity, and Hall mobility of n-type AgIn5S8 single crystals
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2001-01-01)
The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: an...
Composition dependency of lattice anisotropy of TlBX2-type chain mixed crystals
Hasanlı, Nızamı; Tas, M (Wiley, 2000-01-01)
Variation of the lattice parameters of TlTl1-xInxSe2 chain mixed crystals with composition have been studied by X-ray diffraction technique. The lattice anisotropy (c/a) of the TlBX2-type mixed crystals changes linearly with substitution of the atoms located bath at the center and at the vertices of the BX4 tetrahedra. A brief survey of the important features of the effect of isomorphic atom substitution on the lattice anisotropy of TlBX2-type mixed crystals with chain structure has been presented.
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals
Hasanlı, Nızamı (Wiley, 2009-03-01)
The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Crystal data and some physical properties of Tl2InGaTe4 crystals
Qasrawi, A. F.; Hasanlı, Nızamı (Wiley, 2007-08-01)
The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property o...
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01)
The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
A. Qasrawi and N. Hasanlı, “Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals,”
CRYSTAL RESEARCH AND TECHNOLOGY
, pp. 1399–1410, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47495.