Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer

Kulakci, Mustafa
Turan, Raşit
The fabrication of efficient silicon-based Light Emitting Devices (LEDs) is extremely important for the integration of photonic and electronic components on the same Si platform. In this paper, we report on the room temperature electroluminescence properties of Tb-doped MOS-LED devices with an active layer of SiO2 and Si-rich SiOx produced using the magnetron co-sputtering technique. The electroluminescence properties of both types of devices were studied as a function of processing conditions and material properties. A clear Tb3+ electroluminescence signal from the D-5(4)-> F-7(j) transitions has been observed without any parasitic defect emissions from the active layer hosting the Tb3+ ions. We have shown that the incorporation of excess Si into the active layer significantly enhances the electroluminescence signal, which lowers the turn on voltage below 10 V and is crucially important for meeting the low-power requirements for integrated circuit applications. We also addressed some of the fundamental questions concerning the light generation mechanisms in the Tb-doped system.


Optimization of fabrication steps for n-type c-Si solar cells
Orhan, Efe; Ünalan, Hüsnü Emrah; Department of Metallurgical and Materials Engineering (2019)
Crystalline silicon (c-Si) solar cells fabricated on p-type wafers are still dominating the photovoltaic (PV) industry due to advantages in device processing and early focus on p-type cells in the development phase of the industry. Over the years, studies on n-type Czochralski (CZ) substrates have shown that they can be more desirable for the terrestrial applications due to superior material and process advantages such as higher minority carrier lifetime, easier passivation of the surface, absence of light ...
Silver nanowire networks on polydimethylsiloxane for organic and perovskite solar cell electrodes
Güner, Elif Özlem; Ünalan, Hüsnü Emrah; Department of Metallurgical and Materials Engineering (2019)
Transparent and conductive electrodes are widely used in optoelectronic devices. The most prominent and commercial transparent conductive electrode is indium tin oxide (ITO). However, there is an increasing demand to replace ITO with alternative materials due to inherent drawbacks of ITO such as its cost, brittleness and scarcity of indium. Silver nanowire (Ag NW) networks are among the best candidates to replace ITO with their excellent optoelectronic and mechanical properties. Ag NW networks have already ...
Design and implementation of a current source converter based statcom for reactive power compensation
Bilgin, Hazım Faruk; Ermiş, Muammer; Department of Electrical and Electronics Engineering (2007)
This research work is devoted to the analysis, design and development of the first medium power Current-Source Converter (CSC) based distribution-type Static Synchronous Compensator (D-STATCOM) with simplest converter topology and coupling transformer connection. The developed CSC-D-STATCOM includes a +/-750kVAr full-bridge CSC employing Selective Harmonic Elimination Method (SHEM), a 250kVAr low-pass input filter at 1kV voltage level, and a Δ/Y connected coupling transformer for connection to medium-voltag...
Design of a radiation hardened PWM controller built on SOI
Kılıç, Emrecan; Külah, Haluk; Department of Electrical and Electronics Engineering (2018)
Design of efficient and compact switch-mode power supplies (SMPS) is a popular topic in power electronics. Silicon has been used as semiconductor material of switches in DCDC converters for decades. However, preference of using GaN as semiconductor material of switches in these topologies has recently increased due to their superior properties. GaN FETs have lower gate capacitance, lower channel resistance, higher frequency operation, higher breakdown voltage and higher temperature operation than silicon MO...
Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells
Pehlivan, O.; Yilmaz, O.; Kodolbas, A. O.; Duygulu, O.; Tomak, Mehmet (2013-01-01)
We have utilized ex-situ spectroscopic ellipsometry and HRTEM to characterize the optical and structural properties of intrinsic a-Si:H thin layer that plays a key role for the improvement of the open circuit voltage in silicon heterojunction solar cells. Intrinsic a-Si:H films were deposited on (100) p-type CZ silicon wafers by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at 225 degrees C substrate temperature and deposition time ranges from 15 s to 1800 s. Observed changes in the imag...
Citation Formats
M. Kulakci and R. Turan, “Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer,” JOURNAL OF LUMINESCENCE, pp. 37–42, 2013, Accessed: 00, 2020. [Online]. Available: