Analysis of boron doped hydrogenated amorphous silicon carbide thin film for silicon heterojunction solar cells

Salimi, Arghavan
Silicon based solar cells are the dominant type of solar cells in the photovoltaic industry. Recently, there have been increasing efforts to develop c-Si solar cells with higher efficiency and lower cost. Among them, silicon heterojunction solar cell (SHJ) is attracting much attention because of its superior performance values demonstrated at both R&D and industrial levels. One of the common limiting criteria is the recombination at the front side which can be solved by providing proper passivation at the front contact. In case of amorphous silicon (a-Si), the parasitic absorption of photons and recombination of the minority ca rriers are considerably high, thus, one approach can be increasing its optical band gap to overcome these impediments. One way to increase the optical band gap of a-Si is adding carbon(C) during boron(B) doping and hydrogenating amorphous silicon (a-Si:H). Generally, the p-type a-Si:H optical band gap is around 1.6 eV which is close to the intrinsic a-Si:H optical band gap. Meanwhile, C alloying allows us to increase the optical band gap from 1.6 up to 2.4 eV. In this work, we tried to increase the optical band gap of B doped a-Si:H deposited by PECVD through introducing C into the structure. We modified the deposition parameters such as deposition temperature, RF power of PECVD, and precursors gas flow rates to see their effects on the doping, a-Si:H optical band gap, and amount of C introduced into the structure. The best characteristic parameters that we have achieved for p-a-SiC:H is optical band gap of 1.89 eV with dark conductivity of 1.8×10-5 (Ω.cm)-1. By increasing the RF -power, we have observed that the methane molecules decompose better and C atom incorporates into the structure. Also, increasing the methane flow rate improved the C incorporation within the structure.


A numerical analysis of interdigitated back contacted silicon solar cells
Acar, Beran; Yerci, Selçuk; Turan, Raşit; Department of Electrical and Electronics Engineering (2018)
The state-of-the-art solar cells manufactured using crystalline silicon (c-Si) are highly cost-effective, competing with fossil fuel-based energy sources. However, relatively more complex cell structures (i.e. interdigitated back contact, IBC) need to be developed to further increase the efficiency/cost ratio. In this thesis, the effects of structural parameters such as cell dimensions, metal contact geometry and contact resistances on the efficiency of IBC and bifacial IBC silicon solar cells were studied ...
Fabrication and characterization of PEDOT:PSS hole transport layers for silicon solar cells
Türkay, Deniz; Yerci, Selçuk; Department of Micro and Nanotechnology (2019)
Heterojunction silicon solar cells have gained considerable interest in recent years with the demonstration of record-high device performances. However, these devices are typically based on inorganic layers fabricated at high temperatures under vacuum environment, using toxic precursors. The low temperature budget, non-toxic chemical contents, and wide range of adjustability in physical and electrical properties make poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) a promising candidate a...
Production of amorphous silicon / p-type crystalline silicon heterojunction solar cells by sputtering and PECVD methods
Eygi, Zeynep Deniz; Turan, Raşit; Erçelebi, Ayşe Çiğdem; Department of Physics (2011)
Silicon heterojunction solar cells, a-Si:H/c-Si, are promising technology for future photovoltaic systems. An a-Si:H/c-Si heterojunction solar cell combines the advantages of single crystalline silicon photovoltaic with thin-film technologies. This thesis reports a detailed survey of heterojunction silicon solar cells with p-type wafer fabricated by magnetron sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques at low processing temperature. In the first part of this study, magnetron ...
Salimi, Yasaman; Turan, Raşit; Ünalan, Hüsnü Emrah; Department of Micro and Nanotechnology (2022-5-09)
P-type solar cells currently hold most of the market share in industrial solar cell fabrication statistics. NREL's highest efficiency record for p-type crystalline perc cells is 22.8%. However, there is an ever-increasing interest in n-type wafers due to the many advantages they have against p-type cells. According to the ITRPV's estimation, the n-type cell structures will be taking half the industry's share by 2031. Compared to p-type cells, n-type cells yield better efficiency and lifetime values and are ...
Design of high-efficiency dye-sensitized nanocrystalline solar cells
Yavuz, Halil İbrahim; Özenbaş, Ahmet Macit; Erçelebi, Ayşe Çiğdem; Department of Metallurgical and Materials Engineering (2014)
Nanocrystalline dye sensitized solar cells (DSSC) technology continues to develop as a better alternative to the silicon based solar cells, which are commercialized. This study aims at finding low cost and highly efficient DSSC design and production methods via examination of effects of both photoanode structure and photon-electron generation mechanism on photoanode layers. This will contribute to the commercialization of DSSC technology. Photoanode structure is examined in four groups; transparent conducti...
Citation Formats
A. Salimi, “Analysis of boron doped hydrogenated amorphous silicon carbide thin film for silicon heterojunction solar cells,” Thesis (M.S.) -- Graduate School of Natural and Applied Sciences. Micro and Nanotechnology., Middle East Technical University, 2019.