Electrical, optical and photoconductive properties of poly(dibenzo-18-crown-6)

Date

2004-01-01

Author

Qasrawi, AF
Cihaner, A
Önal, Ahmet Muhtar

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

164
views

0
downloads

To investigate the energy levels, absorption bands, band gap, dominant transport mechanisms, recombination mechanisms and the free carrier life time behavior of poly-dibenzo-18-crown-6, poly-DB18C6, films, the dark electrical conductivity in the temperature range of 200-550 K, the absorbance and photocurrent spectra, the photocurrent -illumination intensity and time dependence at 300 K were studied. The dark electrical conductivity measurements revealed the existence of three energy levels located at 0.93, 0.32 and 0.76 eV below the tails of the conduction band. The main transport mechanism in the dark was found to be due to the thermal excitation of charge carriers and the variable range hopping above and below 260 K, respectively. The photocurrent and absorbance spectra reflect a band gap of 3.9 eV. The photocurrent -illumination intensity dependence reflects the sublinear, linear and supralinear characters indicating the decrease, remaining constant and increase in the free electron life time that in turn show the bimolecular, strong and very strong recombination characters at the surface under the application of low, moderate and high illumination intensity, respectively. A response time of 25.6 s was calculated from the decay Of I-ph-time dependence. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40346

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200310149

Collections

Department of Chemistry, Article

Suggestions

OpenMETU
Core

Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals KARABULUT, ORHAN; Parlak, Mehmet; Yılmaz, Koray Kamil; Hasanlı, Nızamı (Wiley, 2005-03-01) The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10(-9) (Omega-cm)(-1), 48 cm(2)V(-1) s(-1) and similar to 10(9) cm(-3), respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single ...
Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films Sankir, Nurdan D.; Sankir, Mehmet; Parlak, Mehmet (Springer Science and Business Media LLC, 2009-05-01) Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80-380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott's parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature ...
Photoluminescence spectra of GaS0.75Se0.25 layered single crystals Hasanlı, Nızamı; Ozkan, H (Wiley, 2002-01-01) Photoluminescence (PL) spectra of GaS0.75Se0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658 nm (1.884 eV, B-band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8x10(-3) to 10.7 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in ...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01) Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Temperature dependence of band gaps in sputtered SnSe thin films Delice, S.; Isik, M.; Gullu, H.H.; Terlemezoğlu, Makbule; Bayrakli Surucu, O.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-08-01) Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band ga...

Citation Formats

A. Qasrawi, A. Cihaner, and A. M. Önal, “Electrical, optical and photoconductive properties of poly(dibenzo-18-crown-6),” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 56–62, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40346.