Fabrication of 15-mu m Pitch 640 x 512 InAs/GaSb Type-II Superlattice Focal Plane Arrays

Oguz, Fikri
Arslan, Yetkin
Ulker, Erkin
Bek, Alpan
Ozbay, Ekmel
We present the fabrication of large format 640 x 512, 15-mu m pitch, mid-wave infrared region (MWIR) InAs/GaSb type-II superlattice (T2SL) focal plane array (FPA). In this report, the details of device design and fabrication processes are withheld adhering to the common practice of most of the manufactures and developers because of the strategic importance; however, information about fabrication processes of T2SLs FPA is presented to a certain extent. Comparison of etching techniques, passivation materials and methods, and substrate thinning (mechanical and chemical) is given besides of details regarding the standard ohmic contact and indium (In) bump formations. Morphological investigations of fabrication step are included. Large area pixels, 220 mu m x 220 mu m, fabricated by different etching methods and passivation materials/methods are compared in terms of dark current levels. Wet passivation with (NH4)(2)S is discussed in terms of morphological investigations, and dark current results are compared with untreated samples. Large area pixel level characterizations as well as image level benchmarking of mechanical and chemical substrate thinning are reported. Effect of GaSb substrate on device performance and the way of reducing stress of In bumps are revealed. The importance of complete substrate removal is demonstrated through FPA images.


High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance
Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01)
We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01)
We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
Large-format voltage-tunable dual-color midwavelength infrared quantum-well infrared photodetector focal plane array
Kaldirim, M.; Eker, S. U.; Arslan, Y.; Tümkaya, Umman; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2008-05-01)
We report a large-format (640 x 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mu m) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mu m (color 1) to 4.7 mu m (color 2) as the bias is increased within th...
Advanced Design of Schottky Photodiodes in Bulk CMOS for High Speed Optical Receivers
Orsel, Ogulcan Emre; Erdil, Mertcan; Kocaman, Serdar (Institute of Electrical and Electronics Engineers (IEEE), 2020-02-01)
This paper provides theoretical insight on how circular Schottky photodiodes in bulk CMOS can be optimized for certain integrated receiver applications. An optimal photodiode size is analytically demonstrated and the effects of a metal plate reflector are simulated using a transfer-matrix method, both for frontside and backside illumination. Finally, a distributed circuit model is presented, which deviates from the classical lumped model for large photodiodes or sheet resistances. The presented methodologie...
Quasi-static solutions of elliptical, cylindrical-coupled parallel coplanar waveguide, and coupled parallel coplanar waveguide with finite ground planes
Duyar, Mehmet; Akan, Volkan; Yazgan, Erdem; Bayrak, Mehmet (Wiley, 2007-07-01)
This article presents the quasi-static analyses of elliptical-coupled parallel coplanar waveguide (ECP CPW), cylindrical-coupled parallel coplanar waveguide (CCP CPW), and coupled parallel coplanar waveguide (CP CPW) with finite ground planes. Conformal-mappi ng techniques have been used through the analyses. The obtained results show good agreement with IE3D electromagnetic-circuit solver software's simulations for the planar case. In addition, the results have been compared with others available in the li...
Citation Formats
F. Oguz, Y. Arslan, E. Ulker, A. Bek, and E. Ozbay, “Fabrication of 15-mu m Pitch 640 x 512 InAs/GaSb Type-II Superlattice Focal Plane Arrays,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36097.