Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals

Date

2011-03-17

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

37
views

0
downloads

Photoluminescence (PL) spectra of TlGaSeS layered single crystals have been studied in the wavelength region of 695-1010 nm and in the temperature range of 20-56K. Two PL bands centered at 773 (1.605 eV, A-band) and 989 nm (1.254 eV, B-band) were observed at T = 20 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 4.2 to 111.4 mW cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap of the crystal. Radiative transitions from deep donor levels located at 0.721 and 1.069 eV below the bottom of conduction band to shallow acceptor levels located at 0.008 and 0.011 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the PL spectra, respectively.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/42636

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2011.01.065

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals Goksen, K; Gasanly, NM; Seyhan, A; Turan, Raşit (Elsevier BV, 2006-02-15) Photoluminescence (PL) spectra of Ga4Se3S layered single crystals have been studied in the wavelength region of 535-855 nm and in the temperature range of 16-200 K. Two PL bands centered at 572 nm (2.168 eV, A-band) and 652 nm (1.902 eV, B-band) were observed at T = 16 K. Variations of both bands have been studied as a function of excitation laser intensity in the range 0.10-149.92 mW cm(-2). The A-band is attributed to radiative transition from donor level located 0.125 eV below the bottom of conduction ba...
Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals Hasanlı, Nızamı; Yuksek, NS (2002-12-16) Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 46.0-800 nm and in, the temperature range 10-65 K. We observed one wide PL band-centred at 584 nm (2.122 eV) at T = 10 K and an excitation intensity of 7.5 W cm(-2). We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm(-2). The red shift of this band with increasing temperature and blue shift with increasing laser excitation inte...
Structural and electrical properties of TlGa(SxSe1-x)(2) mixed crystals KARABULUT, ORHAN; Parlak, Mehmet; Mamedov, G. M. (Elsevier BV, 2007-01-21) Systematic investigations of crystal structure, electrical conductivity and photoconductivity have been carried out on the complete series of TlGa(SxSe1-x)(2) solid solutions. X-ray diffraction (XRD) analyses together with TREOR90 computer program have revealed that this compound shows different structural modifications at each composition. The possible charge transfer mechanisms have been investigated by performing temperature dependent electrical conductivity measurements in the temperature range of 100-4...
Radiative donor-acceptor pair recombination in TlInS2 single crystals Aydinli, A; Hasanlı, Nızamı; Yilmaz, I; Serpenguzel, A (IOP Publishing, 1999-07-01) Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 FV cm(-2). A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasin...
Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals Isik, M.; Guler, I.; Hasanlı, Nızamı (2013-01-01) Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction ban...

Citation Formats

N. Hasanlı, “Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 4205–4208, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42636.