Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals

Date

2011-03-17

Author

Hasanlı, Nızamı

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Photoluminescence (PL) spectra of TlGaSeS layered single crystals have been studied in the wavelength region of 695-1010 nm and in the temperature range of 20-56K. Two PL bands centered at 773 (1.605 eV, A-band) and 989 nm (1.254 eV, B-band) were observed at T = 20 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 4.2 to 111.4 mW cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap of the crystal. Radiative transitions from deep donor levels located at 0.721 and 1.069 eV below the bottom of conduction band to shallow acceptor levels located at 0.008 and 0.011 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the PL spectra, respectively.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/42636

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2011.01.065

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 4205–4208, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42636.