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Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Date
2006-02-15
Author
Goksen, K
Gasanly, NM
Seyhan, A
Turan, Raşit
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Photoluminescence (PL) spectra of Ga4Se3S layered single crystals have been studied in the wavelength region of 535-855 nm and in the temperature range of 16-200 K. Two PL bands centered at 572 nm (2.168 eV, A-band) and 652 nm (1.902 eV, B-band) were observed at T = 16 K. Variations of both bands have been studied as a function of excitation laser intensity in the range 0.10-149.92 mW cm(-2). The A-band is attributed to radiative transition from donor level located 0.125 eV below the bottom of conduction band to shallow acceptor level located 0.011 eV above the top of the valence band. The increase of the width of B-band and its quenching with increasing temperature is explained using the configurational coordinate model.
Subject Keywords
Mechanical Engineering
,
General Materials Science
,
Mechanics of Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/41821
Journal
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
DOI
https://doi.org/10.1016/j.mseb.2005.09.043
Collections
Department of Physics, Article