Photoluminescence spectroscopy in the study of growth of CdSxSe1-x nanocrystals in glass

Allahverdi, C
Yukselici, MH
Turan, Raşit
Seyhan, A
Growth of CdS0.08Se0.92 nanocrystals embedded in glass is studied through the combinative analysis of optical absorption and photoluminescence (PL) spectroscopy at room temperature. The quantum confinement effect is observed in these structures. Average nanocrystal radii are found to be in the range of 2.3-4.2 nm with the help of a quantized state effective mass theory. Photoluminescence spectra are studied by means of the model of Ravindran et al (1999 Nanostruct. Mater. 11 603). The difference between the energies of the deep trap peak and first exciton peak is found to be similar to0.2-0.3 eV. The possible sources of the overall shift in these peaks are also discussed.


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To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
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Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01)
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
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The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500-1100 run. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature i...
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Measurements are made of polarized Raman scattering and infrared reflection spectra of twenty two compositions of GaS1‐xSex layer mixed crystals grown by the Bridgman method. Besides the usual one‐mode and two‐mode behaviours of phonon modes, a number of more complex dependences characterized by the appearance of additional bands in the spectra of mixed crystals are observed. Their appearance is accounted for by the uncovering of the Brillouin zone due to the disturbance of the periodicity of the crystal la...
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
Citation Formats
C. Allahverdi, M. Yukselici, R. Turan, and A. Seyhan, “Photoluminescence spectroscopy in the study of growth of CdSxSe1-x nanocrystals in glass,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1005–1009, 2004, Accessed: 00, 2020. [Online]. Available: