Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals

Date

2003-09-01

Author

Yuksek, NS
Hasanlı, Nızamı
Ozkan, H

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We have carried out thermally stimulated current measurements on as-grown T1GaS(2) layered single crystals in the temperature range of 10-60 K with various heating rates. We found experimental evidence for the presence of three trapping centres in TlGaS2, located at 6, 12 and 26 meV. We have determined the trap parameters using various methods of analysis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47030

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/18/9/304

Collections

Department of Physics, Article

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Citation Formats

N. Yuksek, N. Hasanlı, and H. Ozkan, “Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 834–838, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47030.