Structural, electrical and anisotropic properties of Tl4Se3S chain crystals

Hasanlı, Nızamı
The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal.


Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique
KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01)
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
IŞIK, MEHMET; Gullu, H. H.; Delice, S.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-04-01)
In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were carried out to characterize the thin films and obtain information about the crystal structure, atomic composition, surface morphology and vibrational modes. Temperature-dependent transmission measurements were performed in between 10 and 300 K and in the spectral range of 400-1050 nm. The anal...
Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry
Isik, M.; Delice, S.; Nasser, H.; Hasanlı, Nızamı; Darvishov, N. H.; Bagiev, V. E. (Elsevier BV, 2020-12-01)
Structural and optical characteristics of Bi12SiO20 single crystal grown by the Czochralski method were investigated by virtue of X-ray diffraction (XRD) and spectroscopic ellipsometry measurements. XRD analysis indicated that the studied crystal possesses cubic structure with lattice parameters of a = 1.0107 nm. Spectral dependencies of several optical parameters like complex dielectric constant, refractive index, extinction and absorption coefficients were determined using ellipsometry experiments perform...
Mechanical behaviour of Al2O3-ZrO2 minicomposite reinforced glass matrix optomechanical composite
Dericioğlu, Arcan Fehmi (Informa UK Limited, 2003-08-01)
To understand the effect of a 'mesh-structured reinforcement' on the optical and mechanical properties of optomechanical composites, a unidirectional Al2O3 fibre-ZrO2 matrix minicomposite reinforced glass matrix optomechanical composite has been fabricated. By regular alignment of the minicomposites in the glass matrix as part of the 'mesh structure' a high degree of optical transparency is obtained in the composite; this transparency is proportional to its 'optical window' regions. The mesh structured rein...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Structural, electrical and anisotropic properties of Tl4Se3S chain crystals,” MATERIALS RESEARCH BULLETIN, pp. 2009–2013, 2009, Accessed: 00, 2020. [Online]. Available: