Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry

Date

2020-12-01

Author

Isik, M.
Delice, S.
Nasser, H.
Hasanlı, Nızamı
Darvishov, N. H.
Bagiev, V. E.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

370
views

0
downloads

Structural and optical characteristics of Bi12SiO20 single crystal grown by the Czochralski method were investigated by virtue of X-ray diffraction (XRD) and spectroscopic ellipsometry measurements. XRD analysis indicated that the studied crystal possesses cubic structure with lattice parameters of a = 1.0107 nm. Spectral dependencies of several optical parameters like complex dielectric constant, refractive index, extinction and absorption coefficients were determined using ellipsometry experiments performed in the energy region of 1.2-6.2 eV. The energy band gap of Bi12SiO20 crystals was found to be 3.25 eV by utilizing absorption coefficient analysis. Moreover, critical point energies were calculated as 3.54, 4.02, 4.82 and 5.58 eV from analyses of the second energy derivative spectra of the complex dielectric constant.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/57596

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2020.105286

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally stimulated currents in n-InS single crystals Hasanlı, Nızamı; Yuksek, NS (Elsevier BV, 2003-03-24) Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
Crystal data and indirect optical transitions in Tl2InGaSe4 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2008-06-03) The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the tempera...
Structural, electrical and anisotropic properties of Tl4Se3S chain crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2009-10-01) The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02) Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Optical anisotropy in GaSe Seyhan, A; Karabulut, O; Akınoğlu, Bülent Gültekin; Aslan, B; Turan, Raşit (Wiley, 2005-09-01) Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak...

Citation Formats

M. Isik, S. Delice, H. Nasser, N. Hasanlı, N. H. Darvishov, and V. E. Bagiev, “Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57596.