Critical currents in Bi-2223 tapes near T-c under magnetic field and gamma-irradiation

Date

2000-12-01

Author

Kayed, TS
Ozkan, H
Hasanlı, Nızamı
Ercan, I

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

204
views

0
downloads

The critical temperature and critical current of Bi-2223 tapes have been studied near T-c under a magnetic field and gamma -irradiation. T-c decreases from 109 to 96 K with an increase in B up to 100 mT. In the 100-110 K range I-c decreases by about 75-85% at steady rates in low fields up to 20-50 mT, then decreases to zero at slower rates with further increase of field. The I-c versus B plots are non-exponential in small fields (up to 30 mT at 100 K and up to 10 mT at 108 K) and change to exponential form at higher fields and temperatures due to the increased role of flux flow for the current dissipation. The T-c of the tapes decreases from 109 to 106 K with an increase in the gamma -dose up to 50 MR, most of the change taking place in low doses up to 10 MR. The critical currents of the tapes decrease by about 50-60% with gamma -irradiation under low doses up to 10 MR, then changes very little at higher doses up to 50 MR. We propose that gamma -irradiation reduces the anisotropy of the oxygen and carrier distributions in the tapes causing the decrease in T-c and I-c; but the links between the grains, being predominantly SIS-type, have not been effectively changed by gamma -irradiation.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Metals and Alloys, Ceramics and Composites

URI

https://hdl.handle.net/11511/44492

Journal

SUPERCONDUCTOR SCIENCE & TECHNOLOGY

DOI

https://doi.org/10.1088/0953-2048/13/12/310

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effect of magnetic field and gamma irradiation on the electrical properties and structure of the Tl-based ceramic superconductors Ozkan, H; Hasanlı, Nızamı; Kayed, T (IOP Publishing, 2000-02-01) The voltage-current (V-I) characteristics, critical temperatures and the critical currents of Tl2Ba2CaCu2O8 (Tl-2212) and Tl2Ba2Ca2Cu3O10 (Tl-2223) ceramic superconductors were studied in magnetic fields up to 80 mT after several gamma irradiations up to 100 MR. The effect of gamma irradiation on the structure of these materials has also been studied. The normal state resistance increases by 20-30% with gamma irradiation, most of the changes taking place in low gamma doses up to 10 MR. The critical temperat...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01) Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01) The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...

Citation Formats

T. Kayed, H. Ozkan, N. Hasanlı, and I. Ercan, “Critical currents in Bi-2223 tapes near T-c under magnetic field and gamma-irradiation,” SUPERCONDUCTOR SCIENCE & TECHNOLOGY, pp. 1625–1628, 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44492.