Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe

Download

index.pdf

Date

2001-01-01

Author

Hasanlı, Nızamı
Ozkan, H

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

236
views

0
downloads

Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E'((12)) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/44611

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/1521-4079(200112)36:12<1393::aid-crat1393>3.0.co;2-n

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Reflectance spectra and refractive index of a Nd : YAG laser-oxidized Si surface Aygun, G; Atanassova, E; Turan, Raşit; Babeva, T (Elsevier BV, 2005-02-15) The reflectance spectra and refractive index of Nd:YAG laser-oxidized SiO2 layers with thicknesses from 15 to 75 nm have been investigated with respect to the laser beam energy density and substrate temperature. Thickness and refractive index of films have been determined from reflectance measurements at normal light incidence in the spectral range 300-800 nm. It was found that the oxide-growth conditions at higher substrate temperatures and laser powers greater than 3.36 J cm(-2) provides a better film qua...
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...
Optical anisotropy in GaSe Seyhan, A; Karabulut, O; Akınoğlu, Bülent Gültekin; Aslan, B; Turan, Raşit (Wiley, 2005-09-01) Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Photoluminescence spectra of GaS0.75Se0.25 layered single crystals Hasanlı, Nızamı; Ozkan, H (Wiley, 2002-01-01) Photoluminescence (PL) spectra of GaS0.75Se0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658 nm (1.884 eV, B-band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8x10(-3) to 10.7 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in ...

Citation Formats

N. Hasanlı and H. Ozkan, “Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 1393–1398, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44611.