Fabrication and characterization of PEDOT:PSS hole transport layers for silicon solar cells

Date

2019

Author

Türkay, Deniz

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

9
views

0
downloads

Cite This

Heterojunction silicon solar cells have gained considerable interest in recent years with the demonstration of record-high device performances. However, these devices are typically based on inorganic layers fabricated at high temperatures under vacuum environment, using toxic precursors. The low temperature budget, non-toxic chemical contents, and wide range of adjustability in physical and electrical properties make poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) a promising candidate as an organic hole-transport layer (HTL) for low-cost silicon solar cells. In this thesis, effects of process conditions and chemical additives on the electrical performance of PEDOT:PSS layers on p-type silicon [(p)Si] are analyzed. Electrical performance is assessed in terms of contact resistivity and contact saturation current density. A rapid measurement procedure is proposed and utilized to extract contact resistivity of (p)Si/PEDOT:PSS interface, without the necessity for metal deposition or numerical simulations. Ultimately, contact resistivities smaller than 0.3 ohm.cm2, and contact saturation current densities near 200 fA/cm2 are demonstrated.

Subject Keywords

Solar cells., Keywords: Solar cell, Silicon, Organic, Heterojunction.

URI

http://etd.lib.metu.edu.tr/upload/12624536/index.pdf
https://hdl.handle.net/11511/44631

Collections

Graduate School of Natural and Applied Sciences, Thesis