Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Date

2013-04-01

Author

Korucu, D.
TÜRÜT, ABDULMECİT
Turan, Raşit
ALTINDAL, ŞEMSETTİN

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

217
views

0
downloads

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R,) and interface state(s) (N-ss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C-c and conductance G(c) values in order to see the effects of R-s. Both the C-V and R-s-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N-ss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.

Subject Keywords

Ag/p-InP SBD, Impedance spectroscopy, Series resistance, Interface states, Intersection in C

URI

https://hdl.handle.net/11511/45942

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2012.09.015

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique Korucu, D.; Turut, A.; Turan, Raşit; Altindal, Ş. (Springer Science and Business Media LLC, 2012-6-25) The frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of -5 - 5 V at room temperature. The effects of surface states (N (ss)) and series resistance (R (s)) on C-V and G/w-V characteristics have been investigated in detail. The frequency dependent N (ss) and R (s) profiles were obtained for various applied bias voltages. The experimental...
Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode OCAK, YUSUF SELİM; Kulakci, M.; KILIÇOĞLU, TAHSİN; Turan, Raşit; AKKILIÇ, KEMAL (2009-08-01) Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier ...
Ionic conductivity of microporous titanosilicate ETS-10 and ion-exchanged Mn+-ETS-10 (where, Mn+ = Li+, Na+, Mg2+, Zn2+, Ca2+) thin films prepared by secondary growth method Galioglu, Sezin; Çam, İbrahim; Akata Kurç, Burcu (2017-09-15) Impedance spectroscopy was used to investigate the long-range ionic conductivity of the microporous, titanosilicate (Na,K)-ETS-10 and ion-exchanged Mn+-ETS-10 (where, Mn+ = Li+, Na+, Mg2+, Zn2+, Ca2+) thin films prepared by secondary growth method. To figure out the effect of grain boundary on ionic conduction, as-synthesized (Na,K)-ETS-10 films possessing different thicknesses of columnar grain structure (i.e., films prepared via 4h-, 6h-, 8h-, and 10h-growth) were tested. The conductivities of the films w...
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01) Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Critical Behavior of the Dielectric Susceptibility for the Ferroelectric Liquid A7 Yurtseven, Hasan Hamit (Springer Science and Business Media LLC, 2011-04-01) The temperature dependence of the dielectric susceptibility is studied here for the smectic A-isotropic liquid transition of the ferroelectric A7. From the analysis of the experimental data for the dielectric constant, the critical behavior of the dielectric susceptibility is described close to the smectic A-isotropic liquid transition in this liquid crystal.

Citation Formats

D. Korucu, A. TÜRÜT, R. Turan, and Ş. ALTINDAL, “Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 344–351, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45942.