Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Date

2013-04-01

Author

Korucu, D.
TÜRÜT, ABDULMECİT
Turan, Raşit
ALTINDAL, ŞEMSETTİN

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Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R,) and interface state(s) (N-ss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C-c and conductance G(c) values in order to see the effects of R-s. Both the C-V and R-s-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N-ss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.

Subject Keywords

Ag/p-InP SBD, Impedance spectroscopy, Series resistance, Interface states, Intersection in C

URI

https://hdl.handle.net/11511/45942

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2012.09.015

Collections

Department of Physics, Article

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Citation Formats

D. Korucu, A. TÜRÜT, R. Turan, and Ş. ALTINDAL, “Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 344–351, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45942.