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Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
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Date
2001-01-01
Author
Hasanlı, Nızamı
Salihoglu, O
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Undoped p-GaSe layered single crystals wet e grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02. 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 x 10(-27), 1.9 x 10(-25). and 3.2 x 10(-21) cm(2) for capture cross sections and 3.2 x 10(14) 1.1 x 10(16) and 1.2 x 10(16) cm(-3) for the concentrations, respectively.
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/46014
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/1521-4079(200103)36:3<295::aid-crat295>3.0.co;2-u
Collections
Department of Physics, Article
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N. Hasanlı and O. Salihoglu, “Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals,”
CRYSTAL RESEARCH AND TECHNOLOGY
, pp. 295–301, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46014.