Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals

Date

2009-11-15

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

73
views

0
downloads

Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24) cm(2) for capture cross-sections and 1.9 x 10(12), 2.9 x 10(11) and 4.5 x 10(10) cm(-3) for the concentrations, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of electron traps was also revealed from the analysis of the TSC data obtained at different light excitation temperatures This experimental technique provided values of 9 and 77 meV/decade for traps distribution of peaks A and C, respectively. (c) 2009 Elsevier B.V. All rights reserved

Subject Keywords

General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/43310

Journal

MATERIALS CHEMISTRY AND PHYSICS

DOI

https://doi.org/10.1016/j.matchemphys.2009.06.039

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements YILDIRIM, TACETTİN; Hasanlı, Nızamı (Wiley, 2009-12-01) Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) f...
Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-04-18) Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was obs...
Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-09-01) Thermally stimulated current measurements were carried out on as-grown Tl2Ga2S3Se layered single crystals. The investigations were performed in temperatures ranging from 10 to 320 K with heating rates of 0.6-1.2 K s(-1). The analysis of the data revealed the hole trap level located at 498 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.1 x 10(-18) cm(2) for capture cross-section and 2....
Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal Hasanlı, Nızamı; Ozkan, H. (Wiley, 2006-11-01) Thermally stimulated current measurements are carried out on as-grown Tl4Ga3InSe8 layered single crystal in the temperature range 10-160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl4Ga3InSe8. They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experim...
Thermally stimulated current measurements in undoped Ga3InSe4 single crystals IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2011-06-01) The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonabl...

Citation Formats

T. YILDIRIM and N. Hasanlı, “Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals,” MATERIALS CHEMISTRY AND PHYSICS, pp. 32–36, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43310.