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Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements
Date
2009-12-01
Author
YILDIRIM, TACETTİN
Hasanlı, Nızamı
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Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/41149
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/crat.200900495
Collections
Department of Physics, Article
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T. YILDIRIM and N. Hasanlı, “Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements,”
CRYSTAL RESEARCH AND TECHNOLOGY
, pp. 1267–1271, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41149.