Optical properties of Tl2InGaS4 layered single crystal

2007-08-01
Qasrawi, A. F.
Hasanlı, Nızamı
The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature region of 300-500 K and the room temperature refractive index, n(lambda), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28-2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of -4.03 x 10(-4) eV/K. The room temperature n(lambda), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively.
OPTICAL MATERIALS

Suggestions

Optical parameters of anisotropic chain-structured Tl2InGaTe4 crystals by spectroscopic ellipsometry
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2016-01-01)
Spectroscopic ellipsometry measurements were performed on Tl2InGaTe4 single crystals in the 1.2-6.2 eV range for orientations of electric field, parallel (E//c) and perpendicular (E perpendicular to c) to optic axis c. Spectral dependence of optical parameters; real and imaginary components of the dielectric function, refractive index and extinction coefficient were obtained from the analyses of experimental data using an ambient-substrate optical model. The analysis of the absorption data calculated using ...
Current transport mechanisms in low resistive CdS thin films
Günal, İbrahim; Parlak, Mehmet (Springer Science and Business Media LLC, 1997-02-01)
The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.
Calculation of the Raman frequency shifts for the alpha phase of solid oxygen
Yurtseven, Hasan Hamit (Elsevier BV, 2017-01-01)
We calculate in this study the Raman frequencies of the two librons and one vibron at various pressures at constant temperatures of 10 K and also at the temperatures of 6 and 18 K by using the volume data from the literature through the mode Gruneisen parameter for the a phase of oxygen.
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01)
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Photoelectronic and electrical properties of InS crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01)
To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Citation Formats
A. F. Qasrawi and N. Hasanlı, “Optical properties of Tl2InGaS4 layered single crystal,” OPTICAL MATERIALS, pp. 1763–1767, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46191.