Current transport mechanisms in low resistive CdS thin films

Date

1997-02-01

Author

Günal, İbrahim
Parlak, Mehmet

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The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37442

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1023/a:1018540601482

Collections

Department of Physics, Article

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Citation Formats

İ. Günal and M. Parlak, “Current transport mechanisms in low resistive CdS thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 9–13, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37442.