Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

Date

2011-10-17

Author

AKSU, SERDAR
BACAKSIZ, EMİN
Parlak, Mehmet
YILMAZ, ŞERİFE
POLAT, İSMAİL
Altunbas, M.
Turksoy, M.
Topkaya, R.
ÖZDOĞAN, Kemal

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

160
views

0
downloads

The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 degrees C to 400 degrees C in step of 50 degrees C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1)direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 degrees C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few percent. Band gap energy of the undoped sample decreased from 2.42 to 2.36 eV upon Mn diffusion at 400 degrees C. The magnetization of films as a function of magnetic field and temperature were measured. Clear ferromagnetic loops were observed for the Mn diffusion-doped CdS films prepared by annealing above 350 degrees C.

Subject Keywords

General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46275

Journal

MATERIALS CHEMISTRY AND PHYSICS

DOI

https://doi.org/10.1016/j.matchemphys.2011.06.046

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Structural and temperature-dependent optical properties of thermally evaporated CdS thin films IŞIK, MEHMET; Gullu, H. H.; Delice, S.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-04-01) In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were carried out to characterize the thin films and obtain information about the crystal structure, atomic composition, surface morphology and vibrational modes. Temperature-dependent transmission measurements were performed in between 10 and 300 K and in the spectral range of 400-1050 nm. The anal...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01) Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Symmetry conditions for type II multiferroicity in commensurate magnetic structures Perez-Mato, J. M.; Gallego, S. V.; Elcoro, L.; Tasci, E.; Aroyo, M. I. (IOP Publishing, 2016-07-20) Type II multiferroics are magnetically ordered phases that exhibit ferroelectricity as a magnetic induced effect. We show that in single-k magnetic phases the presence in the paramagnetic phase of non-symmorphic symmetry combined with some specific type of magnetic propagation vector can be sufficient for the occurrence of this type of multiferroic behaviour. Other symmetry scenarios especially favourable for spin driven multiferroicity are also presented. We review and classify known type II multiferroics ...
Structural and electrical properties of Cd doped InSe thin films Qasrawi, AF; Günal, İbrahim; Ercelebi, C (Wiley, 2000-01-01) Polycrystalline Cd doped InSe thin films were obtained by thermal co-evaporation of alpha -In2Se3 lumps and Cd onto glass substrates at a temperature of 150 degreesC. The films were annealed at 150 degrees and 200 degreesC. The films were found to contain around 46% In, 47% Se and 7% Cd in weight. The films exhibited p-type conductivity. The results of conductivity measurements have revealed that thermionic emission and variable range hopping are the two dominant conduction mechanisms, in the temperature ra...
Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) İmer, Muhsine Bilge; Rajan, Siddharth; Keller, Stacia; Mishra, Umesh K.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P. (Cambridge University Press (CUP), 2008-02-01) We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs fo...

Citation Formats

S. AKSU et al., “Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation,” MATERIALS CHEMISTRY AND PHYSICS, pp. 340–345, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46275.