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Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K

Transmittance on TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) was carried out in the 2.35-2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV.