Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K

Date

2018-10-01

Author

Hasanlı, Nızamı

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Transmittance on TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) was carried out in the 2.35-2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV.

Subject Keywords

Electrical and Electronic Engineering, General Computer Science, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/46631

Journal

OPTICAL MATERIALS

DOI

https://doi.org/10.1016/j.optmat.2018.06.056

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K,” OPTICAL MATERIALS, pp. 94–98, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46631.