Spectroscopic ellipsometry investigation of optical properties of beta-Ga2S3 single crystals

Date

2018-12-01

Author

Işık, Mehmet
Hasanlı, Nızamı
Gasanova, L.

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Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure of beta-Ga2S3 . The spectra of real and imaginary parts of complex dielectric function (epsilon = epsilon(1) + epsilon(2)) and refractive index (N = n + ik) were plotted in the 1.2-6.2 eV range according to results of ellipsometric data. The e 2 -spectrum and analyses of absorption coefficient pointed out that studied sample has band gap energy of 2.48 eV which is consistent with that of beta-Ga(2)S(3)2. Critical point energies of beta-Ga2S3 were also reported in the present study.

Subject Keywords

Electrical and Electronic Engineering, General Computer Science, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/42351

Journal

OPTICAL MATERIALS

DOI

https://doi.org/10.1016/j.optmat.2018.09.049

Collections

Department of Physics, Article

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Citation Formats

M. Işık, N. Hasanlı, and L. Gasanova, “Spectroscopic ellipsometry investigation of optical properties of beta-Ga2S3 single crystals,” OPTICAL MATERIALS, pp. 95–99, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42351.