Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation

Download

index.pdf

Date

2008-11-28

Author

AYGÜN ÖZYÜZER, GÜLNUR
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

202
views

0
downloads

Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta(2)O(5) film structure has been determined. It is shown that the oxide layers obtained for the laser beam energy density in the range from 3.26 to 3.31 J/cm(2) and the substrate temperature around 350 degrees C have superior properties. FTIR measurement demonstrates that the Ta(2)O(5) layers are obtained with the laser assisted oxidation technique. Metal Oxide Semiconductor capacitors fabricated on the grown oxide layers exhibits typical Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. However, the density of oxide charges is found to be slightly higher than the typical values of thermally grown oxides. The conduction mechanism studied by Current-Voltage measurements of the capacitors indicated that the current flow through the oxide layer is modified Poole-Frenkel type. It is concluded that the Ta(2)O(5) films formed by the technique of Nd:YAG laser-enhanced oxidation at relatively low substrate temperatures are potentially useful for device applications and their properties can be further improved by post oxidation annealing processes.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/46792

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2008.07.039

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01) Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...
Structural and optical characteristics of tantalum oxide grown by pulsed Nd : YAG laser oxidation Atanassova, E; Aygun, G; Turan, Raşit; Babeva, T (American Vacuum Society, 2006-03-01) Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature (250-400 degrees C) during oxidation and its optimization with respect to the used laser beam energy de...
Thickness and optical constant distributions of PECVD a-SiCx : H thin films along electrode radial direction Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01) Two sets of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were grown on glass and c-Si substrates by Plasma enhanced chemical vapor deposition (PECVD) technique at pressures of 0.5 and 0.1 Torr. The influence of the pressure on the distribution of thicknesses, refractive indices at 632.8 nm and optical gaps from the edge to the center of the bottom electrode of PECVD system is examined by transmission, single wavelength ellipsometry and Fourier transform infrared spectroscopy. A recently intr...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21) A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Structural and optical properties of thermally annealed thallium indium disulfide thin films Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30) Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...

Citation Formats

G. AYGÜN ÖZYÜZER and R. Turan, “Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation,” THIN SOLID FILMS, pp. 994–999, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46792.