Structural and optical properties of thermally annealed thallium indium disulfide thin films

2020-06-30
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.
THIN SOLID FILMS

Suggestions

Structural, electrochemical and optical comparisons of tungsten oxide coatings derived from tungsten powder-based sols
Isik, Dilek; AK, METİN; Durucan, Caner (Elsevier BV, 2009-11-02)
Tungsten trioxide (WO3) electrochromic coatings have been formed on indium tin oxide-coated glass substrates by aqueous routes. Coating sols are obtained by dissolving tungsten powder in acetylated (APTA) or plain peroxotungstic acid (PTA) solutions. The structural evolution and electrochromic performance of the coatings as a function of calcination temperature (250 degrees C and 400 degrees C) have been reported. Differential scanning calorimetry and X-ray diffraction have shown that amorphous WO3 films ar...
The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films
Parlak, Mehmet (Elsevier BV, 1998-06-08)
X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150-250 degrees C and 100-200 degrees C, respectively. An analysis of structural measurements indicates that there exist three phases of In-Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The comp...
Thickness and optical constant distributions of PECVD a-SiCx : H thin films along electrode radial direction
Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01)
Two sets of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were grown on glass and c-Si substrates by Plasma enhanced chemical vapor deposition (PECVD) technique at pressures of 0.5 and 0.1 Torr. The influence of the pressure on the distribution of thicknesses, refractive indices at 632.8 nm and optical gaps from the edge to the center of the bottom electrode of PECVD system is examined by transmission, single wavelength ellipsometry and Fourier transform infrared spectroscopy. A recently intr...
Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques
Hus, S. M.; Parlak, Mehmet (IOP Publishing, 2008-02-07)
In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films deposited by thermal and e-beam evaporation techniques were carried out by measuring temperature dependent conductivity, mobility, photoconductivity under different illumination intensity, photoresponse, transmission and x-ray diffraction. As a result of these measurements, it was observed that the films deposited by the thermal evaporation technique have room temperature conductivity values approximately three o...
Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges
Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01)
Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...
Citation Formats
I. Guler and N. Hasanlı, “Structural and optical properties of thermally annealed thallium indium disulfide thin films,” THIN SOLID FILMS, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48850.