Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Date
2020-06-30
Author
Guler, I
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
218
views
0
downloads
Cite This
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.
Subject Keywords
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Surfaces, Coatings and Films
,
Surfaces and Interfaces
,
Metals and Alloys
URI
https://hdl.handle.net/11511/48850
Journal
THIN SOLID FILMS
DOI
https://doi.org/10.1016/j.tsf.2020.137985
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges
Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01)
Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...
The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films
Parlak, Mehmet (Elsevier BV, 1998-06-08)
X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150-250 degrees C and 100-200 degrees C, respectively. An analysis of structural measurements indicates that there exist three phases of In-Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The comp...
Structural, electrochemical and optical comparisons of tungsten oxide coatings derived from tungsten powder-based sols
Isik, Dilek; AK, METİN; Durucan, Caner (Elsevier BV, 2009-11-02)
Tungsten trioxide (WO3) electrochromic coatings have been formed on indium tin oxide-coated glass substrates by aqueous routes. Coating sols are obtained by dissolving tungsten powder in acetylated (APTA) or plain peroxotungstic acid (PTA) solutions. The structural evolution and electrochromic performance of the coatings as a function of calcination temperature (250 degrees C and 400 degrees C) have been reported. Differential scanning calorimetry and X-ray diffraction have shown that amorphous WO3 films ar...
Thickness and optical constant distributions of PECVD a-SiCx : H thin films along electrode radial direction
Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01)
Two sets of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were grown on glass and c-Si substrates by Plasma enhanced chemical vapor deposition (PECVD) technique at pressures of 0.5 and 0.1 Torr. The influence of the pressure on the distribution of thicknesses, refractive indices at 632.8 nm and optical gaps from the edge to the center of the bottom electrode of PECVD system is examined by transmission, single wavelength ellipsometry and Fourier transform infrared spectroscopy. A recently intr...
Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation
Sedani, Salar H.; Yasar, Ozlen F.; Karaman, Mehmet; Turan, Raşit (Elsevier BV, 2020-01-31)
In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing ...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
I. Guler and N. Hasanlı, “Structural and optical properties of thermally annealed thallium indium disulfide thin films,”
THIN SOLID FILMS
, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48850.