Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure

Date

2006-02-21

Author

Ozdemir, O
Atilgan, I
Akaoglu, B
Sel, K
Katircioglu, B

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A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under strong accumulation and inversion on the frequency power-law was interpreted as due to the carrier exchange mechanism by hopping. (c) 2005 Elsevier B.V All rights reserved.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/67968

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2005.10.065

Collections

Department of Physics, Article

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Citation Formats

O. Ozdemir, I. Atilgan, B. Akaoglu, K. Sel, and B. Katircioglu, “Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure,” THIN SOLID FILMS, pp. 149–156, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67968.