Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure

Ozdemir, O
Atilgan, I
Akaoglu, B
Sel, K
Katircioglu, B
A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under strong accumulation and inversion on the frequency power-law was interpreted as due to the carrier exchange mechanism by hopping. (c) 2005 Elsevier B.V All rights reserved.


Thickness and optical constant distributions of PECVD a-SiCx : H thin films along electrode radial direction
Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01)
Two sets of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were grown on glass and c-Si substrates by Plasma enhanced chemical vapor deposition (PECVD) technique at pressures of 0.5 and 0.1 Torr. The influence of the pressure on the distribution of thicknesses, refractive indices at 632.8 nm and optical gaps from the edge to the center of the bottom electrode of PECVD system is examined by transmission, single wavelength ellipsometry and Fourier transform infrared spectroscopy. A recently intr...
Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate
Ozmen, O. Tuzun; Karaman, M.; Sedani, S. H.; Sagban, H. M.; Turan, Raşit (Elsevier BV, 2019-11-01)
Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p(+) type (similar to 2 x 10(18) cm(-3)). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have adv...
Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges
Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01)
Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...
Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation
AYGÜN ÖZYÜZER, GÜLNUR; Turan, Raşit (Elsevier BV, 2008-11-28)
Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta(2)O(5) film structure has been determined. It is shown that the oxide layers obtain...
Optoelectrochemical properties of the copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole monomer with 3,4-ethylenedioxythiophene
AK, Metin; Tanyeli, Cihangir; Akhmedo, Dris M.; Toppare, Levent Kamil (Elsevier BV, 2008-04-30)
Copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole (MTNP) with 3,4-ethylene dioxythiophene (EDOT) was electro-chemically synthesized and characterized via cyclic voltammetry, Fourier Transform Infrared spectroscopy, Scanning Electron Microscopy, conductivity measurements. Spectroelectrochemical investigations showed that resulting copolymer film has distinct electrochromic properties. It has five different colors (dark purple, red, light grey, green, blue). At the neutral state m due to...
Citation Formats
O. Ozdemir, I. Atilgan, B. Akaoglu, K. Sel, and B. Katircioglu, “Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure,” THIN SOLID FILMS, pp. 149–156, 2006, Accessed: 00, 2020. [Online]. Available: