Three-dimensional numerical modelling of temporal and spatial pattern formation in a dc-driven gas discharge-semiconductor system

A three-dimensional numerical model is developed and applied to study the temporal and spatial pattern formation in the planar layered system, consisting of a glow discharge layer, coupled to a high ohmic semiconductor layer. The whole system is sandwiched between two planar electrodes, to which a dc voltage is applied.


Numerical evidence of spontaneous division of dissipative solitons in a planar gas discharge-semiconductor system
Rafatov, İsmail (AIP Publishing, 2019-09-01)
This work deals with the formation of patterns of spatially localized solitary objects in a planar semiconductor gas-discharge system with a high Ohmic electrode. These objects, known as dissipative solitons, are generated in this system in the form of self-organized current filaments, which develop from the homogeneous stationary state by the Turing bifurcation. The numerical model reveals, for the first time, evidence of spontaneous division of the current filaments in this system, similar to that observe...
The investigation of electronic, mechanical and lattice dynamical properties of PdCoX (X=Si and Ge) half-Heusler metallics in , and structural phases: an ab initio study
ERKİŞİ, AYTAÇ; SÜRÜCÜ, GÖKHAN; Ellialtioglu, Recai (Informa UK Limited, 2017-01-01)
PdCoX (X=Si and Ge) alloys which are XYZ type half-Heusler alloys and also have face centred cubic MgAgAs-type structure which conforms to space group, have been investigated in different atomic arrangements which are called , and phases, using local spin density approximation in the density functional theory as implemented in VASP (Vienna Ab Initio Simulation Package) software. Both of the alloys are considered in ferromagnetic order. After the investigation of stable structural phase for these alloys, the...
Experimental study on the velocity limits of magnetized rotating plasmas
Teodorescu, C.; Clary, R.; Ellis, R. F.; Hassam, A. B.; Lunsford, R.; Uzun Kaymak, İlker Ümit; Young, W. C. (AIP Publishing, 2008-04-01)
An experimental study on the physical limits of the rotation velocity of magnetized plasmas is presented. Experiments are performed in the Maryland Centrifugal Experiment (MCX) [R. F. Ellis , Phys. Plasmas 12, 055704 (2005)], a mirror magnetic field plasma rotating azimuthally. The externally applied parameters that control the plasma characteristics-applied voltage, external magnetic field, and fill pressure-are scanned across the entire available range of values. It is found that the plasma rotation veloc...
Structural stability and energetics of single-walled carbon nanotubes under uniaxial strain
Dereli, G; Ozdogan, C (American Physical Society (APS), 2003-01-15)
A (10x10) single-walled carbon nanotube consisting of 400 atoms with 20 layers is simulated under tensile loading using our developed O(N) parallel tight-binding molecular-dynamics algorithms. It is observed that the simulated carbon nanotube is able to carry the strain up to 122% of the relaxed tube length in elongation and up to 93% for compression. Young's modulus, tensile strength, and the Poisson ratio are calculated and the values found are 0.311 TPa, 4.92 GPa, and 0.287, respectively. The stress-stra...
The Nonlinear Theory of the Snoek Relaxation Effect under the Strong and Homogeneous Bias Stress System
Ogurtani, Tarik Ömer (Wiley, 1987-11-1)
The nonlinear theory of energy dissipation associated with the mobile paraelastic octahedral interstitial atoms in inhomogeneous interaction fields is applied to the specific problem of the ordinary Snoek relaxation under the influence of the uniform static stress system (an external bias field). In the case of a uniaxial static bias stress system, an extremely accurate and simple analytical expression is deduced for the logarithmic decrement which indicates strong dependence on the magnitude, sign, and dir...
Citation Formats
İ. Rafatov, “Three-dimensional numerical modelling of temporal and spatial pattern formation in a dc-driven gas discharge-semiconductor system,” PLASMA SOURCES SCIENCE & TECHNOLOGY, pp. 0–0, 2016, Accessed: 00, 2020. [Online]. Available: